Semiconductor Device, Electronic Device, and Method of Manufacturing Semiconductor Device
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Abstract
Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.
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Citations
51 Claims
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1-23. -23. (canceled)
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24. A method for manufacturing a semiconductor device comprising steps of:
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forming a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, wherein the semiconductor layer comprises a first metal oxide; and forming a wiring electrically connected to the thin film transistor by a droplet discharge method, wherein the wiring comprises a second metal oxide. - View Dependent Claims (25, 26, 27, 28, 29)
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30. A method for manufacturing a semiconductor device comprising steps of:
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forming a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, wherein the semiconductor layer comprises a first metal oxide; and forming a source electrode layer electrically connected to the thin film transistor by a droplet discharge method, wherein the source electrode layer comprises a second metal oxide. - View Dependent Claims (31, 32, 33)
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34. A method for manufacturing a semiconductor device comprising steps of:
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forming a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, wherein the semiconductor layer comprises a first metal oxide; and forming a drain electrode layer electrically connected to the thin film transistor by a droplet discharge method, wherein the drain electrode layer comprises a second metal oxide. - View Dependent Claims (35, 36, 37)
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38. A method for manufacturing a semiconductor device comprising steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming a semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween, the semiconductor layer comprising a first metal oxide; and forming a wiring electrically connected to the semiconductor layer by a droplet discharge method, wherein the wiring comprises a second metal oxide. - View Dependent Claims (39, 40, 41, 42, 43)
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44. A method for manufacturing a semiconductor device comprising steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming a semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween, the semiconductor layer comprising a first metal oxide; and forming a source electrode layer electrically connected to the semiconductor layer by a droplet discharge method, wherein the source electrode layer comprises a second metal oxide. - View Dependent Claims (45, 46, 47)
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48. A method for manufacturing a semiconductor device comprising steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming a semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween, the semiconductor layer comprising a first metal oxide; and forming a drain electrode layer electrically connected to the semiconductor layer by a droplet discharge method, wherein the drain electrode layer comprises a second metal oxide. - View Dependent Claims (49, 50, 51)
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Specification