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GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS

  • US 20100099236A1
  • Filed: 05/07/2009
  • Published: 04/22/2010
  • Est. Priority Date: 10/16/2008
  • Status: Active Grant
First Claim
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1. A method of depositing dielectric material in a trench in a semiconductor substrate, the method comprising:

  • forming a liner layer comprising boron nitride over bottom and sidewall surfaces of the trench;

    depositing the dielectric material comprising silicon oxide over the liner layer, wherein the dielectric material at least partially fills the trench; and

    etching a portion of the deposited dielectric material with an etchant, wherein the etchant removes the dielectric material at a higher etch rate than the liner layer.

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