GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS
First Claim
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1. A method of depositing dielectric material in a trench in a semiconductor substrate, the method comprising:
- forming a liner layer comprising boron nitride over bottom and sidewall surfaces of the trench;
depositing the dielectric material comprising silicon oxide over the liner layer, wherein the dielectric material at least partially fills the trench; and
etching a portion of the deposited dielectric material with an etchant, wherein the etchant removes the dielectric material at a higher etch rate than the liner layer.
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Abstract
A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
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26 Claims
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1. A method of depositing dielectric material in a trench in a semiconductor substrate, the method comprising:
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forming a liner layer comprising boron nitride over bottom and sidewall surfaces of the trench; depositing the dielectric material comprising silicon oxide over the liner layer, wherein the dielectric material at least partially fills the trench; and etching a portion of the deposited dielectric material with an etchant, wherein the etchant removes the dielectric material at a higher etch rate than the liner layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of removing a void formed in a dielectric material that fills a trench in a semiconductor substrate, the method comprising:
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etching a top portion of the dielectric material to expose an opening in the void, wherein the etching also exposes a portion of a liner layer comprising boron nitride that was covered by the dielectric material; and depositing additional dielectric material into the exposed void to remove the void by filling it with the additional dielectric material.
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12. A method of depositing a film to fill a gap in a surface of a substrate, the method comprising:
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forming a dielectric liner on the surface of the substrate, wherein a silicon oxide to dielectric liner etch ratio is greater than about 50; depositing a first layer of dielectric on the dielectric liner; etching the surface of the substrate; and depositing a second layer of dielectric to substantially fill the gap. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification