NF3/H2 REMOTE PLASMA PROCESS WITH HIGH ETCH SELECTIVITY OF PSG/BPSG OVER THERMAL OXIDE AND LOW DENSITY SURFACE DEFECTS

• US 20100099263A1
• Filed: 10/20/2008
• Published: 04/22/2010
• Est. Priority Date: 10/20/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ge, Zhenbin, Yang, Haichun, Kao, Chien-Teh, Or, David T., Lu, Xinliang, Chang, Mei
• Application Number:
  US12/254,716
• Publication Number:
  US 20100099263A1
• Time in Patent Office: Days
• US Class Current: 438/703
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A method and apparatus for selectively etching doped semiconductor oxides faster than undoped oxides. The method comprises applying dissociative energy to a mixture of nitrogen trifluoride and hydrogen gas remotely, flowing the activated gas toward a processing chamber to allow time for charged species to be extinguished, and applying the activated gas to the substrate. Reducing the ratio of hydrogen to nitrogen trifluoride increases etch selectivity. A similar process may be used to smooth surface defects in a silicon surface.

Claims

1. A method for treating a semiconductor substrate having doped regions and undoped regions, comprising:

disposing the semiconductor substrate in a processing chamber;

providing a reactive gas mixture comprising hydrogen radicals and fluorine radicals to the processing chamber;

exposing the semiconductor substrate to the reactive gas mixture; and

etching the doped regions of the semiconductor substrate faster than the undoped regions in a carbon-free dry etch process.

2. The method of claim 1, wherein providing the reactive gas mixture comprising hydrogen radicals and fluorine radicals to the processing chamber comprises applying dissociative energy to a precursor gas mixture comprising nitrogen, hydrogen, and fluorine at a remote location to generate active species, and flowing the active species toward the processing chamber for a time sufficient to extinguish electrical charges.

3. The method of claim 1 wherein etching the doped regions of the semiconductor substrate forms volatile species including hydrides and halides.

4. The method of claim 2, wherein the precursor gas mixture comprises ammonium trifluoride and hydrogen gas.

5. The method of claim 4, wherein the precursor gas further comprises a carrier gas.

6. The method of claim 1, wherein providing the reactive gas mixture comprising hydrogen radicals and fluorine radicals to the processing chamber comprises applying RF energy to a precursor gas mixture comprising nitrogen trifluoride, hydrogen, and helium.

7. The method of claim 6, wherein a ratio of hydrogen molecules to nitrogen trifluoride molecules in the precursor gas mixture is at least 1.

8. The method of claim 6, wherein the RF energy is applied at a power level no more than 500 W.

9. The method of claim 1, wherein the reactive gas mixture selectively etches doped silicate glass at a rate at least 20% higher than undoped silicate glass.

10. The method of claim 2, wherein etching the doped regions of the semiconductor substrate faster than the undoped regions comprises reacting the hydrogen radicals with dopants implanted in the doped regions and reacting fluorine radicals with silicates in the doped and undoped regions of the semiconductor substrate.

11. The method of claim 10, wherein reacting the hydrogen radicals with dopants implanted in the doped regions comprises forming volatile compounds and removing the volatile compounds from the processing chamber.

12. The method of claim 1, wherein the reactive gas mixture further comprises hydrogen fluoride.

13. A method of processing a substrate, comprising:

disposing the substrate in a processing chamber;

depositing a doped silicate glass layer on the substrate;

depositing an undoped silicate glass layer on the substrate; and

etching the deposited layers using a carbon-free dry etch process having an etch selectivity of the doped silicate glass layer over the undoped silicate glass layer of at least 1.2.

14. The method of claim 13, wherein the carbon-free dry etch process comprises exposing the substrate to a reactive gas mixture comprising hydrogen radicals and fluorine radicals, reacting the reactive gas mixture with the substrate surface to produce volatile compounds, and removing the volatile compounds.

15. The method of claim 13, wherein the carbon-free dry etch process comprises applying RF energy to a carbon-free precursor gas mixture comprising hydrogen, nitrogen, and fluorine to form a reactive gas mixture comprising hydrogen radicals and fluorine radicals, substantially extinguishing charged species in the reactive gas mixture, and exposing the substrate to the reactive gas mixture.

16. The method of claim 15, wherein the carbon-free precursor gas mixture comprises nitrogen trifluoride and hydrogen gas.

17. The method of claim 16, wherein the carbon-free precursor gas mixture further comprises a carrier gas.

18. The method of claim 16, wherein a ratio of hydrogen molecules to nitrogen trifluoride molecules is at least about 1.

19. The method of claim 14, further comprising controlling the etch selectivity of the carbon-free dry etch process by adjusting a ratio of hydrogen radicals to fluorine radicals in the reactive gas mixture.

20. The method of claim 18, further comprising controlling the etch selectivity of the carbon-free dry etch process by adjusting the ratio of hydrogen molecules to nitrogen trifluoride molecules.

21. The method of claim 13, wherein etching the deposited layers comprises providing a first reactive gas mixture having a first etch selectivity and providing a second reactive gas mixture having a second etch selectivity.

22. The method of claim 21, wherein the first reactive gas mixture has a first ratio of hydrogen radicals to fluorine radicals, and the second reactive gas mixture has a second ratio of hydrogen radicals to fluorine radicals.

23. A method of treating a semiconductor substrate, comprising:

disposing the substrate in a substrate processing chamber;

forming a reactive gas mixture comprising neutral hydrogen radicals and fluorine radicals in a remote activation chamber;

flowing the reactive gas mixture toward a substrate processing chamber for a time interval sufficient to extinguish charged species;

exposing a surface of the substrate to the reactive gas mixture; and

smoothing defects in the surface of the substrate by reacting the reactive gas mixture with oxides and dopants in the surface of the substrate.

24. The method of claim 23, wherein forming the reactive gas mixture comprises providing a precursor gas mixture comprising nitrogen trifluoride and hydrogen gas to the remote activation chamber and applying dissociative energy to the precursor gas mixture.