×

ETCHING HIGH-K MATERIALS

  • US 20100099264A1
  • Filed: 10/20/2008
  • Published: 04/22/2010
  • Est. Priority Date: 10/20/2008
  • Status: Active Grant
First Claim
Patent Images

1. A method of etching a high-k material, comprising the sequential steps of:

  • (a) contacting a high-k material with a pulse of a vapor phase reducing agent; and

    (b) contacting the high-k material with a pulse of a vapor phase volatilizing etchant, thereby removing at least a portion of the high-k material.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×