ETCHING HIGH-K MATERIALS
First Claim
1. A method of etching a high-k material, comprising the sequential steps of:
- (a) contacting a high-k material with a pulse of a vapor phase reducing agent; and
(b) contacting the high-k material with a pulse of a vapor phase volatilizing etchant, thereby removing at least a portion of the high-k material.
2 Assignments
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Accused Products
Abstract
A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is plasma activated. Control over etch rate and/or selectivity are improved by the pulsed process, where, in some embodiments, each step in the cyclical process has a self-limited extent of etching. Embodiments of the method are useful in the fabrication of integrated devices, as well as for cleaning process chambers.
35 Citations
29 Claims
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1. A method of etching a high-k material, comprising the sequential steps of:
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(a) contacting a high-k material with a pulse of a vapor phase reducing agent; and (b) contacting the high-k material with a pulse of a vapor phase volatilizing etchant, thereby removing at least a portion of the high-k material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for etching a high-k material comprising cyclically:
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contacting a high-k material formed over a surface with a vapor phase reducing agent effective for reducing at least a portion of the high-k material, thereby forming a reduced material therefrom; and contacting the reduced material with a vapor phase reactive halide species effective for etch at least a portion the reduced material. - View Dependent Claims (27, 28, 29)
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Specification