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Rapid Thermal Processing using Energy Transfer Layers

  • US 20100099268A1
  • Filed: 12/05/2009
  • Published: 04/22/2010
  • Est. Priority Date: 04/08/2005
  • Status: Active Grant
First Claim
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1. In an overall multi-step technique for processing a semiconductor wafer which includes a pair of opposing major surfaces one of which is a front side surface, being a device side, and the other one of which is a back side surface, a method that is performed as part of annealing said wafer in a process chamber as an intermediate part of the overall multi-step technique, said method comprising:

  • exposing at least one of said major surfaces of the wafer to a pulse of energy having a duration of less than 100 milliseconds at any given exposed location on the major surface in said process chamber in a way that at least contributes to annealing the front side surface of the wafer and which produces a first stress response of the wafer; and

    subjecting the wafer to an additional source of stress to produce an overall modified stress response that compensates for said first stress response such that a modified probability of survivability of the wafer is enhanced as compared to an unmodified survivability that would otherwise be presented by the wafer resulting from only the first stress response.

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