NEAR INFRARED/COLOR IMAGE SENSOR

• US 20100102206A1
• Filed: 10/26/2009
• Published: 04/29/2010
• Est. Priority Date: 10/27/2008
• Status: Abandoned Application

• Current Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Inventors: Vaillant, Jérôme, Cazaux, Yvon
• Application Number:
  US12/606,139
• Publication Number:
  US 20100102206A1
• Time in Patent Office: Days
• US Class Current: 250/208.100
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 27/14652 Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures

Abstract

A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion.

Claims

1. A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder, the photodetector comprising:

at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and

a first region located at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion extending between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion.

2. The photodetector of claim 1, wherein the first photodiode is adjacent to said face and wherein the first region is of the first conductivity type, more heavily doped than the substrate, the first region delimiting the second substrate portion at the level of the second photodiode and bordering a third substrate portion in which the first photodiode is located and which is in contact with the first substrate portion.

3. The photodetector of claim 2, comprising at least a third photodiode adjacent to said face and a second region of the first conductivity type more heavily doped than the substrate, the second region being located under the third photodiode and delimiting a fourth substrate portion at the level of the third photodiode, and being also located at least between the first and second photodiodes, the first region extending under the second region and delimiting, with the second region, the second substrate portion in which the second photodiode is located, the first region, with the second region bordering the third substrate portion.

4. The photodetector of claim 3, wherein the first region is more heavily doped than the second region.

5. The photodetector of claim 3, wherein the second substrate portion has a first depth and the fourth substrate portion has a second depth inferior to the first depth.

6. The photodetector of claim 1, wherein the first region is of a second conductivity type, the first photodiode being formed by the junction between the first substrate portion and the first region.

7. The photodetector of claim 6, comprising at least a third photodiode adjacent to said face, the first region being located between the third photodiode and the holder.

8. The photodetector of claim 6, comprising a second region of the second conductivity type linking the first region to said face.

9. The photodetector of claim 1, comprising a stack of insulating and conductive layers covering said face, and at least a filter associated with the second photodiode which lets through light rays having wavelengths in a first range and in a second range superior to the first range, the second range including near infrared light wavelengths.

10. A method for using the near infrared/color photodetector of claim 1, comprising the following steps:

providing a first signal representative of the charges stored in the first photodiode and a second signal representative of the charges stored in the second photodiode; and

determining a corrected signal equal to the first signal diminished from the product of the second signal and a coefficient.