III-Nitride Semiconductor Light Emitting Device

• US 20100102352A1
• Filed: 12/28/2009
• Published: 04/29/2010
• Est. Priority Date: 10/24/2008
• Status: Abandoned Application

• Current Assignee: Epivalley Co., Ltd.
• Original Assignee: Epivalley Co., Ltd.
• Inventors: Kim, Chang Tae, Na, Min Gyu
• Application Number:
  US12/647,750
• Publication Number:
  US 20100102352A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a scattering zone formed therein, and a plurality of III-nitride semiconductor layers including a first III-nitride semiconductor layer formed over the substrate and having a first conductivity type, a second III-nitride semiconductor layer formed over the first III-nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes.

Claims

1. A III-nitride semiconductor light-emitting device, comprising:

a substrate with a scattering zone formed therein; and

a plurality of III-nitride semiconductor layers including a first III-nitride semiconductor layer formed over the substrate and having a first conductivity type, a second III-nitride semiconductor layer formed over the first III-nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes.

2. The III-nitride semiconductor light-emitting device of claim 1, wherein the scattering zone is a region formed by transformation of the substrate by a laser.

3. The III-nitride semiconductor light-emitting device of claim 1, wherein the scattering zone is continuously formed crossing the inside of the substrate.

4. The III-nitride semiconductor light-emitting device of claim 1, wherein the plurality of scattering zones are formed in the substrate.

5. The III-nitride semiconductor light-emitting device of claim 1, wherein the substrate of sapphire.

6. The III-nitride semiconductor light-emitting device of claim 1, wherein the scattering zone is formed at an upper portion of the inside of the substrate.

7. The III-nitride semiconductor light-emitting device of claim 1, wherein the substrate is sapphire, and the scattering zone is a region formed by transformation of the substrate by a laser.

8. The III-nitride semiconductor light-emitting device of claim 7, wherein the scattering zone is formed at an upper portion of the inside of the substrate