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III-Nitride Semiconductor Light Emitting Device

  • US 20100102352A1
  • Filed: 12/28/2009
  • Published: 04/29/2010
  • Est. Priority Date: 10/24/2008
  • Status: Abandoned Application
First Claim
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1. A III-nitride semiconductor light-emitting device, comprising:

  • a substrate with a scattering zone formed therein; and

    a plurality of III-nitride semiconductor layers including a first III-nitride semiconductor layer formed over the substrate and having a first conductivity type, a second III-nitride semiconductor layer formed over the first III-nitride semiconductor layer and having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes.

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