III-Nitride Semiconductor Light Emitting Device
First Claim
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1. A III-nitride semiconductor light-emitting device, comprising:
- a substrate;
a plurality of III-nitride semiconductor layers positioned over the substrate and including an active layer which generates light by recombination of electrons and holes; and
a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface.
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Abstract
The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers positioned on the substrate and including an active layer which generates light by recombination of electrons and holes, and a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface.
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Citations
10 Claims
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1. A III-nitride semiconductor light-emitting device, comprising:
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a substrate; a plurality of III-nitride semiconductor layers positioned over the substrate and including an active layer which generates light by recombination of electrons and holes; and a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification