III-Nitride Semiconductor Light Emitting Device

• US 20100102353A1
• Filed: 12/29/2009
• Published: 04/29/2010
• Est. Priority Date: 10/15/2008
• Status: Abandoned Application

• Current Assignee: Eun Hyun Park
• Original Assignee: Epivalley Co., Ltd.
• Inventors: Park, Eun Hyun
• Application Number:
  US12/648,692
• Publication Number:
  US 20100102353A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers positioned on the substrate and including an active layer which generates light by recombination of electrons and holes, and a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface.

Claims

1. A III-nitride semiconductor light-emitting device, comprising:

a substrate;

a plurality of III-nitride semiconductor layers positioned over the substrate and including an active layer which generates light by recombination of electrons and holes; and

a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface.

2. The III-nitride semiconductor light-emitting device of claim 1, further comprising a cavity disposed between the scattering surface and the substrate.

3. The III-nitride semiconductor light-emitting device of claim 1, further comprising a protrusion disposed between the scattering surface and the substrate.

4. The III-nitride semiconductor light-emitting device of claim 3, wherein the scattering surface has an convex shape over the protrusion.

5. The III-nitride semiconductor light-emitting device of claim 3, wherein the protrusion and the substrate are formed of sapphire.

6. The III-nitride semiconductor light-emitting device of claim 3, wherein the substrate and the protrusion are formed of different materials.

7. The III-nitride semiconductor light-emitting device of claim 1, wherein the second surface is formed by the growth of the plurality of III-nitride semiconductor layers.

8. The III-nitride semiconductor light-emitting device of claim 1, further comprising:

a cavity disposed between the scattering surface and the substrate; and

a protrusion disposed between the cavity and the substrate.

9. The III-nitride semiconductor light-emitting device of claim 8, wherein the second surface is formed by the growth of the plurality of III-nitride semiconductor layers.

10. The III-nitride semiconductor light-emitting device of claim 9, wherein the substrate is formed of sapphire.