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TRENCH GATE TYPE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

  • US 20100102382A1
  • Filed: 09/26/2008
  • Published: 04/29/2010
  • Est. Priority Date: 09/28/2007
  • Status: Active Grant
First Claim
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1. A trench gate type transistor comprising;

  • a semiconductor layer having a trench formed therein;

    a gate insulation film disposed in the trench and extending outside the trench so as to overlie a top surface of the semiconductor layer;

    a gate electrode disposed on the gate insulation film; and

    a body layer formed in the semiconductor layer so as to be in contact with the gate insulation film on a sidewall of the trench,the gate insulation film comprising a first gate insulation film having a first thickness in a portion in contact with the body layer and a second gate insulation film having a second thickness larger than the first thickness in a portion covering a top edge portion of the trench where the sidewall of the trench and the top surface of the semiconductor layer meet.

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