Transistor, semiconductor device including a transistor and methods of manufacturing the same
First Claim
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1. A transistor, comprising:
- a first channel layer;
a first threshold voltage adjusting layer contacting the first channel layer;
a first source electrode and a first drain electrode contacting opposing ends of the first channel layer;
a first gate electrode separated from the first channel layer; and
a first gate insulating layer between the first channel layer and the first gate electrode,wherein the first channel layer is between the first threshold voltage adjusting layer and the first gate insulating layer.
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Abstract
A transistor, a semiconductor device including the transistor and methods of manufacturing the same are provided, the transistor including a threshold voltage adjusting layer contacting a channel layer. A source electrode and a drain electrode contacting may be formed opposing ends of the channel layer. A gate electrode separated from the channel layer may be formed. A gate insulating layer may be formed between the channel layer and the gate electrode.
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Citations
23 Claims
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1. A transistor, comprising:
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a first channel layer; a first threshold voltage adjusting layer contacting the first channel layer; a first source electrode and a first drain electrode contacting opposing ends of the first channel layer; a first gate electrode separated from the first channel layer; and a first gate insulating layer between the first channel layer and the first gate electrode, wherein the first channel layer is between the first threshold voltage adjusting layer and the first gate insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification