VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS

• US 20100102417A1
• Filed: 10/27/2009
• Published: 04/29/2010
• Est. Priority Date: 10/27/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hakim, Luis Felipe, Ganguli, Seshadri, Yu, Sang Ho, Gandikota, Srinivas
• Application Number:
  US12/606,444
• Publication Number:
  US 20100102417A1
• Time in Patent Office: Days
• US Class Current: 257/532
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01L 21/28088 the final conductor layer next to the insulator being a composite, e.g. TiN
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H10B 12/05 Making the transistor
• CPC Class Codes: H10N 70/011 Manufacture or treatment of multistable switching devices
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.

Claims

1. A method for forming a titanium aluminum nitride material on a substrate surface, comprising:

exposing a substrate sequentially to a titanium precursor gas and a nitrogen plasma to form a titanium nitride layer on the substrate during a plasma enhanced atomic layer deposition process;

exposing the titanium nitride layer to a plasma during a treatment process;

exposing the titanium nitride layer to an aluminum precursor gas while depositing an aluminum layer thereon during a vapor deposition process; and

repeating sequentially the plasma enhanced atomic layer deposition process, the treatment process, and the vapor deposition process to form the titanium aluminum nitride material from the titanium nitride layer and the aluminum layer.

2. The method of claim 1, wherein the titanium precursor gas comprises a titanium precursor selected from the group consisting of tetrakis(dimethylamino) titanium, tetrakis(diethylamino) titanium, tetrakis(methylethylamino) titanium, and derivatives thereof.

3. The method of claim 2, wherein the titanium precursor is tetrakis(dimethylamino) titanium.

4. The method of claim 1, wherein the aluminum precursor gas comprises an aluminum precursor selected from the group consisting of tris(tertbutyl) aluminum, trimethyl aluminum, aluminum chloride, and derivatives thereof.

5. The method of claim 4, wherein the aluminum precursor is tris(tertbutyl) aluminum.

6. The method of claim 1, wherein the nitrogen plasma is formed from a gas selected from the group consisting of nitrogen, ammonia, hydrogen, derivatives thereof, and mixtures thereof.

7. The method of claim 6, wherein the nitrogen plasma comprises nitrogen (N₂) or ammonia.

8. The method of claim 1, wherein the plasma exposed to the titanium nitride layer during the treatment process comprises a gas selected from the group consisting of nitrogen, ammonia, hydrogen, argon, derivatives thereof, and mixtures thereof.

9. The method of claim 8, wherein the plasma exposed to the titanium nitride layer during the treatment process comprises nitrogen (N₂) or ammonia.

10. The method of claim 1, wherein the titanium precursor is tetrakis(dimethylamino) titanium, the aluminum precursor is tris(tertbutyl) aluminum, and the nitrogen precursor is a nitrogen plasma.

11. The method of claim 1, wherein the titanium nitride layer has a thickness within a range from about 5 Å

to about 200 Å

.

12. The method of claim 1, wherein the titanium aluminum nitride material has an aluminum concentration within a range from about 5 atomic percent to about 33 atomic percent.

13. The method of claim 1, wherein the titanium aluminum nitride material comprises a carbon concentration of about 15 atomic percent or less.

14. The method of claim 1, wherein the titanium aluminum nitride material is a metal gate layer on the substrate.

15. The method of claim 14, wherein the metal gate layer has a thickness within a range from about 20 Å

to about 80 Å

.

16. The method of claim 1, wherein the titanium aluminum nitride material is a barrier layer on the substrate and the barrier layer has a thickness within a range from about 15 Å

to about 30 Å

.

17. The method of claim 16, wherein a metal-containing layer is disposed over the barrier layer, and the metal-containing layer comprises copper, cobalt, or ruthenium.

18. The method of claim 1, wherein the titanium aluminum nitride material is an electrode layer within a capacitor on the substrate, and the electrode layer of the titanium aluminum nitride material has a thickness within a range from about 50 Å

to about 200 Å

.

19. A method for forming a titanium aluminum nitride material on a substrate surface, comprising:

exposing a substrate sequentially to a titanium precursor gas and a nitrogen precursor while forming a first titanium nitride layer thereon;

exposing the first titanium nitride layer to a plasma during a treatment process;

exposing the first titanium nitride layer to an aluminum precursor gas while depositing a first aluminum layer thereon;

exposing the substrate sequentially to the titanium precursor gas and the nitrogen precursor while forming a second titanium nitride layer on the first aluminum layer;

exposing the second titanium nitride layer to the plasma during the treatment process; and

exposing the second titanium nitride layer to the aluminum precursor gas while depositing a second aluminum layer thereon.

20. A method for forming a titanium aluminum nitride material on a substrate surface, comprising:

exposing a substrate sequentially to a titanium precursor gas and a nitrogen precursor while forming a first titanium nitride layer thereon;

exposing the first titanium nitride layer to a first plasma during a first treatment process;

exposing the first titanium nitride layer to an aluminum precursor gas while depositing a first aluminum layer thereon;

exposing the first aluminum layer to a second plasma during a second treatment process;

exposing the substrate sequentially to the titanium precursor gas and the nitrogen precursor while forming a second titanium nitride layer on the first aluminum layer;

exposing the second titanium nitride layer to the first plasma during the first treatment process;

exposing the second titanium nitride layer to the aluminum precursor gas while depositing a second aluminum layer thereon; and

exposing the second aluminum layer to the second plasma during the second treatment process.

21. A method for forming a titanium aluminum nitride material on a substrate surface, comprising:

exposing a substrate to a deposition gas comprising a titanium precursor and an aluminum precursor while forming an absorbed layer thereon;

exposing the absorbed layer to a nitrogen plasma while forming a titanium aluminum nitride layer on the substrate; and

repeating sequential exposures of the deposition gas and the nitrogen plasma to form a plurality of titanium aluminum nitride layers on the substrate.

22. A dynamic random access memory (DRAM) capacitor, comprising:

a bottom electrode comprising titanium aluminum nitride and disposed over a contact surface;

a high-k oxide layer disposed over the bottom electrode; and

a top electrode comprising titanium aluminum nitride and disposed over the high-k oxide layer.

23. The DRAM capacitor of claim 22, wherein:

the contact surface comprises a material selected from the group consisting of titanium, tungsten, copper, cobalt, ruthenium, nickel, platinum, aluminum, silver, polysilicon, doped polysilicon, derivatives thereof, alloys thereof, and combinations thereof; and

the high-k oxide layer comprises a high-k material selected from the group consisting of hafnium oxide, hafnium silicate, hafnium aluminum silicate, zirconium oxide, strontium titanium oxide, barium strontium titanate, derivatives thereof, silicates thereof, aluminates thereof, and combinations thereof.

24. The DRAM capacitor of claim 22, wherein the bottom electrode, the high-k oxide layer, and the top electrode are within a trench formed in an oxide material disposed on a substrate.

25. The DRAM capacitor of claim 22, wherein the DRAM capacitor is a buried word line (bWL) DRAM or a buried bit line (bBL) DRAM.