PHASE CHANGE MEMORY DEVICES AND SYSTEMS, AND RELATED PROGRAMMING METHODS

• US 20100103726A1
• Filed: 01/06/2010
• Published: 04/29/2010
• Est. Priority Date: 04/06/2006
• Status: Active Grant

• Current Assignee: GM Global Technology Operations Incorporated (Motors Liquidation Co. GUC Trust), Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: CHO, Woo-Yeong, LEE, Kwang-Jin, CHO, Beak-Hyung, KIM, Hye-Jin, BAE, Jun-Soo
• Granted Patent: US 8,134,866 B2
• Time in Patent Office: Days
• US Class Current: 365/163
• CPC Class Codes: G11C 11/56 using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
• CPC Class Codes: G11C 11/5678 using amorphous/crystalline phase transition storage elements
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0038 Power supply circuits
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 13/0061 Timing circuits or methods
• CPC Class Codes: G11C 13/0064 Verifying circuits or methods
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0054 Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
• CPC Class Codes: G11C 2013/0076 Write operation performed depending on read result
• CPC Class Codes: G11C 2013/0078 Write using current through the cell
• CPC Class Codes: G11C 5/143 Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels G11C5/148 takes precedence; Switching between alternative supplies G11C5/141 takes precedence
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence
• CPC Class Codes: G11C 8/10 Decoders

Abstract

A method programs a phase change memory device. The method comprises receiving program data for selected memory cells; generating bias voltages based on reference cells; sensing read data stored in a selected memory cell by supplying the selected memory cell with verification currents determined by the bias voltages; determining whether the read data is identical to the program data; and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, iteratively applying a write current to the one or more selected memory cells.

Claims

1. A method of performing a program operation in a phase change memory device comprising a plurality of phase change memory cells, the method comprising:

receiving program data to be programmed in selected memory cells among the plurality of phase change memory cells;

generating bias voltages based on reference cells;

sensing read data stored in the selected memory cells by supplying the selected memory cells with verification currents each determined by the bias voltages;

determining whether the read data is identical to the program data; and

upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, iteratively applying a write current to the one or more selected memory cells.

2. The method of claim 1, wherein the reference cells are formed identical to the plurality of phase change memory cells within the phase change memory device.

3. The method of claim 1, wherein a level of the write current increases with each iterative application of the write current.

4. The method of claim 3, wherein the write current is generated by a plurality of reference cells respectively programmed to exhibit different resistances.

5. The method of claim 1, wherein at least a tail portion of a resistance distribution for the selected memory cell is shifted in an increasing resistance direction or a decreasing resistance direction by iteratively performing the steps of sensing data stored in the selected phase change memory cell, determining whether or not the sensed data is equal to the wrote data, and iteratively applying the write current to the selected phase change memory cell.

6. A memory device comprising:

a memory array comprising a plurality of phase change memory cells configured to store write data; and

a generator configured to generate a level-controlled write current based on first reference cells and apply the level-controlled write current to the memory array,

wherein the level-controlled write current is adjusted with each iterative application of the level-controlled write current, until a resistive state of the selected phase change memory cell falls within a defined resistance distribution corresponding to the write data.

7. The memory device of claim 6, wherein the level-controlled write current is increased stepwise according to iteration of write loops.

8. The memory device of claim 7, wherein the generator is configured to program the first reference cells with resistances respectively corresponding to the write loops.

9. The memory device of claim 6, wherein the generator further comprises second reference cells, the generator being further configured to generate bias voltages based on the second reference cells.

10. The memory device of claim 9, further comprising:

a sense amplifier block configured to generate verification currents based on the bias voltages and write data to be stored in selected phase change memory cells among the plurality of phase change memory cells,

the verification currents being applied to the selected phase change memory cells before or after supplying of the level-controlled write current to judge resistance states of the selected phase change memory cells.

11. The memory device of claim 10, wherein the supplying of the level-controlled write current is determined according to whether data of the selected phase change memory cells sensed according to the verification currents is identical to the write data.

12. A memory device comprising:

an array of phase change memory cells divided into a first memory block including a first selected memory cell and a second memory block including a second selected memory cell;

a bias voltage generator circuit configured to generate bias voltages in relation to respective resistance states for a plurality of reference cells; and

sensing and writing circuitry configured to simultaneously write data to the first and second selected memory cells by iteratively applying a level-controlled write current to the first and second selected memory cells based, at least in part on the generated bias voltages and thereafter perform a verify-read operation on the first and second selected memory cells until respective programmed states for the first and second memory cells are equal to the write data, wherein the sensing and writing circuitry are further configured to supply the first and second selected memory cells with verification currents based on the at least one of the bias voltages during each read-verify operation.

13. The memory device of claim 12, wherein the plurality of reference cells is formed identically to the phase change memory cells.

14. The memory device of claim 12, wherein the plurality of reference cells is disposed within the array of phase change memory cells to thereby experience a thermal coupling phenomenon caused when the phase change memory cells are programmed.

15. A method of writing data to a memory comprising a plurality phase change memory cells each storing N-bit data according to respectively corresponding N² resistance distributions, the method comprising:

receiving write data to be written to a selected phase change memory cell in the plurality of phase change memory cells;

applying a write current to the selected phase change memory cell, wherein the write current is defined in relation to the write data;

after applying the write current, sensing a resistive state of the selected phase change memory cell;

comparing the sensed resistive state of the selected phase change memory cell to a reference defined in relation to the write data; and

if the sensed resistive state fails comparison with the reference, adjusting the write current, and applying the adjusted write current to the selected phase change memory cell,

the write current being generated based on reference cells formed identically to the phase change memory cells.

16. The method of claim 15, wherein the adjusting of the write current and applying of the adjusted write current to the selected phase change memory cell continues iteratively until the sensed resistive state falls within one of the N² resistance distributions corresponding to the write data, as indicated by a successful comparison between the sense resistive state and the reference.

17. The method of claim 16, wherein the adjusting of the write current and applying of the adjusted write current to the selected phase change memory cell continues iteratively within a maximum number of iterations.

18. The method of claim 15, wherein a tail portion of any one of the N² resistance distributions corresponding to the write data is shifted into either one of a resistance increasing direction and a resistance decreasing direction by the adjusting of the write current and the iterative applying of the adjusted write current.

19. The method of claim 15, wherein the sensing a resistive state of the selected phase change memory cell comprises applying a verification current to the selected phase change memory cell.

20. The method of claim 19, wherein the verification current is determined by a bias voltage generated according to at least one reference cell.