PHOTONIC CRYSTAL LASER AND METHOD OF MANUFACTURING PHOTONIC CRYSTAL LASER

• US 20100103972A1
• Filed: 01/29/2008
• Published: 04/29/2010
• Est. Priority Date: 03/23/2007
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Matsubara, Hideki, Saito, Hirohisa
• Granted Patent: US 8,155,163 B2
• Time in Patent Office: Days
• US Class Current: 372/50.100
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01S 5/0206 Substrates, e.g. growth, shape, material, removal or bonding; specific crystal orientation H01S5/3202
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/02345 Wire-bonding
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/04256 characterised by the configuration
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/18 Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A photonic crystal laser comprises an n-type substrate, an n-type clad layer, an active layer, a p-type clad layer, a photonic crystal layer, a p-type electrode, an n-type electrode and a package member. The n-type clad layer is formed on a first surface of the n-type substrate. The active layer is formed on the n-type clad layer. The p-type clad layer is formed on the active layer. The photonic crystal layer is formed between the n-type clad layer and the active layer or between the active layer and the p-type clad layer, and includes a photonic crystal portion. The p-type electrode is formed on the photonic crystal portion. The n-type electrode is formed on a second surface, and includes a light-transmitting portion arranged on a position opposed to the photonic crystal portion and an outer peripheral portion having lower light transmittance than the light-transmitting portion.

Claims

1. A photonic crystal laser comprising:

a conductive n-type substrate including a first surface and a second surface opposite to said first surface;

an n-type clad layer formed on said first surface of said n-type substrate;

an active layer formed on said n-type clad layer for emitting light;

a p-type clad layer formed on said active layer;

a photonic crystal layer, formed between said n-type clad layer and said active layer or between said active layer and said p-type clad layer, including a photonic crystal portion having a photonic crystal structure;

a p-type electrode formed on said photonic crystal portion;

an n-type electrode, formed on said second surface of said n-type substrate, including a light-transmitting portion arranged on a position opposed to said photonic crystal portion and an outer peripheral portion having lower transmittance of said light than said light-transmitting portion; and

a package member formed on said p-type electrode.

2. The photonic crystal laser according to claim 1, wherein

a mesa structure is formed on the outer periphery of said p-type electrode, and

an insulating film is formed on at least part of the surface of said mesa structure.

3. The photonic crystal laser according to claim 1, wherein

said light-transmitting portion includes the whole region defined by projecting said photonic crystal portion on said second surface of said n-type substrate as viewed from the side of said p-type electrode.

4. The photonic crystal laser according to claim 1, wherein

said light-emitting portion further includes an electrode provided with uniformly dispersed openings and electrically connected with said outer peripheral portion.

5. The photonic crystal laser according to claim 1, further comprising a transparent electrode, made of a material transparent with respect to said light, arranged on said light-transmitting portion and electrically connected with said outer peripheral portion of said n-type electrode.

6. The photonic crystal laser according to claim 1, wherein

said n-type substrate is made of gallium nitride.

7. A method of manufacturing a photonic crystal laser, comprising the steps of:

preparing a conductive n-type substrate including a first surface and a second surface opposite to said first surface;

forming an n-type clad layer on said first surface of said n-type substrate;

forming an active layer emitting light on said n-type clad layer;

forming a p-type clad layer on said active layer;

forming a photonic crystal layer, formed between said n-type clad layer and said active layer or between said active layer and said p-type clad layer, including a photonic crystal portion having a photonic crystal structure;

forming a p-type electrode on said photonic crystal portion;

forming an n-type electrode including a light-transmitting portion arranged on a position opposed to said photonic crystal portion and an outer peripheral portion having lower transmittance of said light than said light-transmitting portion on said second surface of said n-type substrate; and

forming a package member on said p-type electrode.