APPARATUS FOR TRANSFERRING A WAFER

• US 20100104403A1
• Filed: 03/03/2008
• Published: 04/29/2010
• Est. Priority Date: 03/12/2007
• Status: Abandoned Application

• Current Assignee: KoMiCo Ltd.
• Original Assignee: KoMiCo Ltd.
• Inventors: Jung, Byoung-Jin, Ahn, Sung-Don, Choi, Jung-Ho, Heo, Kang-Il, Gang, Seung-Hee, Cho, Sang-Bum, Chang, Hwi-Souck
• Application Number:
  US12/530,664
• Publication Number:
  US 20100104403A1
• Time in Patent Office: Days
• US Class Current: 414/222.130
• CPC Class Codes: H01L 21/68707 the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Abstract

An apparatus for transferring a wafer includes a ceramic blade, an electrode, a plurality of pads, a coating layer and a robot arm. The blade supports the wafer, and the electrode is disposed inside the blade. Electric power is applied to the electrode to generate an electrostatic force for holding the wafer. The pads are disposed on an upper surface of the blade, and thus frictional forces may be provided between the wafer and the pads. The coating layer is disposed on the blade. The robot arm is connected with the blade to move the blade.

Claims

1. An apparatus for transferring a wafer comprising:

a ceramic blade supporting the wafer;

an electrode disposed inside the blade, wherein electric power is applied to the electrode to generate an electrostatic force for holding the wafer;

a plurality of pads disposed on the blade, wherein the pads provide frictional forces between the wafer and the pads to prevent the wafer from moving on the blade; and

a robot arm connected with the blade to move the blade.

2. The apparatus of claim 1, wherein a gap between the pads and the electrode is greater than that between an upper surface of the electrode and an upper surface of the blade.

3. The apparatus of claim 1, wherein the pads comprise silicon, polyimide or rubber.

4. The apparatus of claim 1, further comprising a coating layer disposed on an upper surface portion of the blade except portions on which the pads are disposed.

5. The apparatus of claim 4, wherein the coating layer comprises oxide, nitride or oxynitride.

6. The apparatus of claim 4, wherein the coating layer is denser than the blade.

7. The apparatus of claim 4, wherein the coating layer is formed by any one selected from the group consisting of a chemical vapor deposition process, a plasma-enhanced chemical vapor deposition process, a high-density plasma chemical vapor deposition process and a sputtering process.

8. The apparatus of claim 1, wherein the electrode comprises a first electrode to which a positive voltage is applied and a second electrode to which a negative voltage is applied.

9. An apparatus for transferring a wafer comprising:

a ceramic blade supporting the wafer;

an electrode disposed inside the blade, wherein electric power is applied to the electrode to generate an electrostatic force for holding the wafer;

a coating layer disposed on the blade, wherein the coating layer is denser than the blade; and

a robot arm connected to the blade to move the blade.