SUBSTRATE TREATING METHOD, SUBSTRATE-PROCESSING APPARATUS, DEVELOPING METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF CLEANING A DEVELOPING SOLUTION NOZZLE

• US 20100104988A1
• Filed: 12/31/2009
• Published: 04/29/2010
• Est. Priority Date: 01/28/2002
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: HAYASAKI, Kei, EMA, Tatsuhiko, TAKAHASHI, Riichiro, ITO, Shinichi
• Application Number:
  US12/651,062
• Publication Number:
  US 20100104988A1
• Time in Patent Office: Days
• US Class Current: 430/432
• CPC Class Codes: G03F 7/3021 from a wafer supported on a rotating chuck
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

There is disclosed a developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, including subjecting the exposed photosensitive resist film to a first developing treatment; supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment; subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment.

Claims

1. A developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, comprising:

subjecting the exposed photosensitive resist film to a first developing treatment;

supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment;

subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and

subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment.

2. The developing method according to claim 1, further comprising:

supplying at least one of an ozone water, oxygen water, nitric acid, and oxygenated water as the cleaning solution having the oxidizing property to the photosensitive resist film.

3. The developing method according to claim 1, further comprising:

supplying at least one of an ozone water, oxygen water, hydrogen water, carbonated water, weak alkali water, slightly acidic water, and pure water to the photosensitive resist film at a second cleaning treatment time.

4. The developing method according to claim 2, further comprising:

supplying a pure water to the photosensitive resist film surface; and

subsequently supplying the cleaning solution at a first cleaning treatment time.

5. The developing method according to claim 1, wherein the developing solution for use in at least one treatment time of the first and second developing treatments is an alkali aqueous solution in which oxidizing gas molecules are dissolved.

6. The developing method according to claim 1, wherein the developing solution for use in at least one treatment time of the first and second developing treatments is an alkali aqueous solution in which reducing gas molecules are dissolved.

7. The developing method according to claim 1, further comprising:

supplying the cleaning solution to the photosensitive resist film to perform the first cleaning treatment in an off time in which the developing solution substantially reaches the bottom surface of the region of the photosensitive resist film soluble to the developing solution.

8. The developing method according to claim 7, wherein the off time is obtained by allowing a light having a specific wavelength to be incident upon the photosensitive resist film during the development, and measuring a point in which an intensity change of a reflected light from the photosensitive resist film changes to a waveform indicating a monotonous change from an interference waveform.

9. The developing method according to claim 7, wherein the off time is obtained by developing the photosensitive resist film in a plurality of developing times, and evaluating a pattern after the development.

10. The developing method according to claim 1, further comprising:

performing the second developing treatment after drying the surface of the substrate after the first cleaning treatment.

11. The developing method according to claim 1, further comprising:

performing the second developing treatment in a state in which the cleaning solution for use in the first cleaning treatment is left on the photosensitive resist film.

12. The developing method according to claim 1, further comprising:

performing a pretreatment to supply a solution having an oxidizing function with respect to the photosensitive resist film to the resist film surface before performing the first developing treatment.

13. The developing method according to claim 1, wherein the first and second developing treatments comprise:

discharging a developing solution to the photosensitive resist film from a developing solution discharge nozzle having a discharge port whose length in a longitudinal direction is longer than a diameter of the substrate; and

moving the substrate and developing solution discharge nozzle from one end to the other end of the substrate with respect to each other to form a developing solution film in the surface of the photosensitive resist film.

14. The developing method according to claim 1, wherein the second cleaning treatment comprises:

continuously discharging the cleaning solution to the substrate from a discharge region disposed in a nozzle while moving the nozzle and substrate with respect to each other in one direction,

wherein the length of the direction crossing at right angles to the direction of the discharge region is equal to or more than a maximum diameter or longest side of the substrate, and

the nozzle continuously spouts a gas to the substrate from a jet region, and the length of the direction crossing at right angles to the direction of the jet region is equal to or more than the maximum diameter or longest side of the substrate.