×

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20100105163A1
  • Filed: 10/20/2009
  • Published: 04/29/2010
  • Est. Priority Date: 10/24/2008
  • Status: Active Grant
First Claim
Patent Images

1. A method for manufacturing a semiconductor device, comprising:

  • forming a gate electrode layer over a substrate having an insulating surface;

    stacking a gate insulating layer, an oxide semiconductor film, and a conductive film over the gate electrode layer;

    forming a first mask layer over the gate insulating layer, the oxide semiconductor film, and the conductive film;

    performing a first etching with the first mask layer to etch the oxide semiconductor film and the conductive film so that an oxide semiconductor layer and a conductive layer are formed;

    forming a second mask layer by ashing the first mask layer; and

    performing a second etching with the second mask layer to etch the oxide semiconductor layer and the conductive layer so that an oxide semiconductor layer having a depression, a source electrode layer, and a drain electrode layer are formed,wherein the first mask layer is formed using a light-exposure mask,wherein the first etching is dry etching with use of an etching gas,wherein the second etching is wet etching with use of an etchant, andwherein the oxide semiconductor layer having the depression includes a region with a smaller thickness than a region overlapping with the source electrode layer or the drain electrode layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×