METHOD OF MODIFYING INSULATING FILM
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Accused Products
Abstract
An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
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Citations
60 Claims
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1-33. -33. (canceled)
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34. A substrate processing method comprising:
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disposing in a processing container a substrate on which is a vapor deposited insulating film, introducing a gas containing oxygen atom and a rare gas into the processing container and introducing electromagnetic wave into the processing container through an antenna to generate a plasma, thereby subjecting the vapor deposited insulating film to a plasma oxidation treatment by the plasma, subjecting the plasma oxidized insulating film to a thermal nitridation annealing treatment at a temperature of 500 to 1,200°
C. - View Dependent Claims (35, 36, 37)
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38. A substrate processing method comprising:
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disposing in a processing container a substrate on which is a vapor deposited insulating film, introducing a gas containing nitrogen atom and a rare gas into the processing container and introducing electromagnetic wave into the processing container through an antenna to generate a plasma, thereby subjecting the vapor deposited insulating film to a plasma nitridation treatment by the plasma, subjecting the plasma nitrided insulating film to a thermal oxidation annealing treatment at a temperature of 500 to 1,200°
C. - View Dependent Claims (39, 40, 41, 42)
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43. A substrate processing method comprising:
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disposing in a processing container a substrate on which is a vapor deposited insulating film, subjecting the vapor deposited insulating film to a thermal oxidation annealing treatment at a temperature of 500 to 1,200°
C.,introducing a gas containing nitrogen atom and a rare gas into the processing container and introducing electromagnetic wave into the processing container through an antenna to generate a plasma, thereby subjecting the thermal oxidation annealed insulating film to a plasma nitridation treatment by the plasma. - View Dependent Claims (44, 45, 46, 47, 57, 58, 59, 60)
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48. A substrate processing method comprising:
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disposing in a processing container a substrate on which is a vapor deposited insulating film, subjecting the vapor deposited insulating film to a thermal nitridation annealing treatment at a temperature of 500 to 1,200°
C.,introducing a gas containing oxygen atom and a rare gas into the processing container and introducing electromagnetic wave into the processing container through an antenna to generate a plasma, thereby subjecting the thermal nitridation annealed insulating film to a plasma oxidation treatment by the plasma. - View Dependent Claims (49, 50, 51)
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52. A substrate processing method comprising:
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disposing in a processing container a substrate on which is a vapor deposited insulating film, introducing a gas containing nitrogen atom and a rare gas into the processing container and introducing electromagnetic wave into the processing container through an antenna to generate a plasma, thereby subjecting the vapor deposited insulating film to a plasma nitridation treatment by the plasma, subjecting the plasma nitrided insulating film to a thermal nitridation annealing treatment at a temperature of 500 to 1,200°
C., or introducing a gas containing oxygen atom and a rare gas into the processing container and introducing electromagnetic wave into the processing container through an antenna to generate a plasma, thereby subjecting the plasma nitrided insulating film to a plasma oxidation treatment by the plasma,introducing a gas containing oxygen atom and a rare gas into the processing container and introducing electromagnetic wave into the processing container through an antenna to generate a plasma, thereby subjecting the thermal nitridation annealed insulating film to a plasma oxidation treatment by the plasma or subjecting the plasma oxidized insulating film to a thermal nitridation annealing treatment at a temperature of 500 to 1,200°
C. - View Dependent Claims (53, 54, 55, 56)
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Specification