METAL-CONTAINING COMPOUND, ITS PRODUCTION METHOD, METAL-CONTAINING THIN FILM, AND ITS FORMATION METHOD

• US 20100105936A1
• Filed: 07/28/2006
• Published: 04/29/2010
• Est. Priority Date: 08/04/2005
• Status: Active Grant

• Current Assignee: Sagami Chemical Research Center, Tosoh Corporation
• Original Assignee: Sagami Chemical Research Center, Tosoh Corporation
• Inventors: Inaba, Koichiro, Furukawa, Taishi, Tada, Ken-ichi, Oshima, Noriaki, Yamakawa, Tetsu
• Granted Patent: US 7,816,549 B2
• Time in Patent Office: Days
• US Class Current: 556/35
• CPC Class Codes: C07C 257/14 having carbon atoms of amidino groups bound to acyclic carbon atoms
• CPC Class Codes: C07F 5/003 without C-Metal linkages
• CPC Class Codes: C07F 5/069 without C-aluminium linkages
• CPC Class Codes: C07F 7/003 without C-Metal linkages
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]

Abstract

A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M_p(NR⁴R⁵)_q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R¹ and R³ each represents C_1-6 alkyl, etc.; R² represents C_1-6 alkyl, etc.; R⁴ and R⁵ each represents C_1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)

Claims

1. A compound represented by the general formula (1)

wherein M represents a Group 4 atom, an aluminum atom, a gallium atom or an indium atom;

when M is a Group 4 atom, n is 3, and when M is an aluminum atom, a gallium atom or an indium atom, n is 2;

R¹ and R³ each independently represent an alkyl group having from 1 to 6 carbon atoms which may be substituted with a fluorine atom, or a trialkylsilyl group represented by R⁶R⁷R⁸Si;

R⁶, R⁷ and R⁸ each independently represent an alkyl group having from 1 to 4 carbon atoms;

R² represents a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms which may be substituted with a fluorine atom;

R² and R³ may be combined to form a ring, and R⁴ and R⁵ each independently represent an alkyl group having from 1 to 4 carbon atoms which may be substituted with a fluorine atom.

2. The compound as claimed in claim 1, wherein M is a Group 4 atom.

3. The compound as claimed in claim 1, wherein M is an aluminum atom or a gallium atom.

4. The compound as claimed in claim 1, wherein R¹ and R³ are an isopropyl group or a tert-butyl group, R² is a hydrogen atom, a methyl group or an ethyl group, and R⁴ and R⁵ are a methyl group or an ethyl group.

9. The compound as claimed in claim 1, wherein M is a titanium atom.

11. The compound as claimed in claim 1, wherein M is a zirconium atom.

13. The compound as claimed in claim 1, wherein M is a hafnium atom.

15. The compound as claimed in claim 1, wherein M is an aluminum atom.

33. An M-containing thin film formed by using the compound as claimed in claim 1 as a raw material, wherein M represents a Group 4 atom, an aluminum atom, a gallium atom or an indium atom.

34. A formation method of an M-containing thin film, which comprises using the compound as claimed in claim 1 as a raw material, wherein represents a Group 4 atom, an aluminum atom, a gallium atom or an indium atom.

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17. A production method of a compound represented by the general formula (1)

wherein, M, R¹, R², R³, R⁴ and R⁵ are the same as defined below;

when M is a Group 4 atom, n is 3; and

when M is an aluminum atom, a gallium atom or an indium atom, n is 2,

which comprises reacting a compound represented by the general formula (3)

M_p(NR⁴R⁵)_q 

 

(3)

wherein M represents a Group 4 atom, an aluminum group, a gallium atom or an indium atom;

when M is a Group 4 atom, p is 1 and q is 4;

when M is an aluminum atom, a gallium atom or an indium atom, p is 2 and q is 6; and

R⁴ and R⁵ each independently represent an alkyl group having from 1 to 4 carbon atoms which may be substituted with a fluorine atom) with a compound represented by the general formula (2)

wherein R¹ and R³ each independently represent an alkyl group having from 1 to 6 carbon atoms which may be substituted with a fluorine atom, or a trialkylsilyl group represented by R⁶R⁷R⁸Si;

R⁶, R⁷ and R⁸ each independently represent an alkyl group having from 1 to 4 carbon atoms;

R² represents a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms which may be substituted with a fluorine atom;

R² and R³ may be combined to form a ring; and

X represents a hydrogen atom, a lithium atom or a sodium atom).

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