Thin two sided single crystal solar cell and manufacturing process thereof

• US 20100108134A1
• Filed: 10/31/2008
• Published: 05/06/2010
• Est. Priority Date: 10/31/2008
• Status: Abandoned Application

• Current Assignee: Crystal Solar Inc.
• Original Assignee: Crystal Solar Inc.
• Inventors: Ravi, Kramadhati V.
• Application Number:
  US12/290,588
• Publication Number:
  US 20100108134A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/072 the potential barriers being only of the PN heterojunction type
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A design and manufacturing method for a photovoltaic (PV) solar cell less than 100 μm thick are disclosed. A porous silicon layer is formed on a wafer substrate. Portions of the PV cell are then formed using diffusion, epitaxy and autodoping from the substrate. All front side processing of the solar cell (junctions, passivation layer, anti-reflective coating, contacts to the N⁺-type layer) is performed while the thin epitaxial layer is attached to the porous layer and substrate. The wafer is then clamped and exfoliated. The back side of the PV cell is completed from the region of the wafer near the exfoliation fracture layer, with subsequent removal of the porous layer, passivation, patterning of contacts, deposition of a conductive coating, and contacts to the P⁺-type layer. During manufacturing, the cell is always supported by either the bulk wafer or a wafer chuck, with no processing of bare thin PV cell

Claims

1. A thin photovoltaic (PV) solar cell, comprising:

A monocrystalline first film of silicon of a first conductivity type at a low doping concentration;

a second film of silicon of the first conductivity type at a medium concentration formed on the lower surface of said second film and epitaxial therewith, wherein the first film is formed by a diffusion process producing an exponential doping profile;

a third film of silicon of a second conductivity type other than the first conductivity type at a medium concentration epitaxial with the upper surface of the second film; and

a passivating film formed on the lower surface of the third film;

wherein

a multiplicity of openings are formed through the passivating film;

a conducting film is formed on the lower surface of the passivating film, wherein the conducting film fills said openings in the passivating film to make contact with the third film;

first contacts deposited on the lower surface of said conducting film; and

second contacts deposited on the upper surface of the third film.

2. The solar cell as in claim 1, wherein the PV solar cell includes the silicon layers which are epitaxial therebetween and include the first, second, and third films, and wherein the silicon layers, the passivating film and the conducting film have a total a thickness of no more than 100 microns.

3. The solar cell as in claim 1, wherein the upper surface of the third film includes a generally planar lower surface and a textured upper surface to improve the light collection efficiency of the PV solar cell, and wherein the second contacts contact the textured upper surface.

4. The solar cell as in claim 3, further comprising a passivation layer on the textured upper surface and wherein the second contacts penetrate the passivation layer and contact the third film.

5. The solar cell as in claim 4, wherein said passivation layer is a silicon oxide layer.

6. The solar cell as in claim 4, wherein said passivation layer is a layer of amorphous silicon.

7. The solar cell as in claim 4, further comprising an anti-reflective coating on the upper surface of the passivation layer deposited before the deposition of the second contacts on the upper surface of the third film.

8. The solar cell as in claim 7, wherein the anti-reflective coating comprises silicon nitride.

9. The solar cell as in claim 1, wherein the combined thickness of the first, second and third films and the passivating film is in the range 30 to 50 microns.

10. The solar cell as in claim 1, wherein the combined thickness of the first, second and third film and the passivating film is in the range 50 to 100 microns.

11. The solar cell as in claim 1, wherein the first conductivity type is P type and the second conductivity type is N type.

12. A thin photovoltaic (PV) solar cell, comprising

a monocrystalline first film of silicon of a first conductivity type at a low doping concentration;

a second film of silicon of the first conductivity type at a medium concentration formed on the lower surface of the first film and epitaxial with the first film;

a third film of silicon of a second conductivity type other than the first conductivity type at a medium concentration formed on the upper surface of the second film, epitaxial with the second film, and having a generally planar upper surface adjacent the second film and a textured lower surface; and

a conformal anti-reflection coating deposited on the textured lower surface of the second film.

a multiplicity of openings are formed through the anti-reflection coating;

a conducting film formed on the lower surface of the anti-reflection coating, wherein the conducting film fills the said openings in the anti-reflection coating film to make contact with the third film;

first contacts deposited on the lower surface of said conducting film; and

second contacts deposited on the upper surface of the third film.

13. The solar cell as in claim 12, wherein the PV solar cell includes silicon layers which are epitaxial therebetween and include the first, second, and third films, and wherein the silicon layers, the anti-reflection coating and the conducting film have a total a thickness of no more than 100 microns.

14. A thin photovoltaic solar cell, comprising:

a support; and

a generally planar photovoltaic structure bonded to the support and including semiconductor silicon layers epitaxial with each other and including a P-N junction between the silicon layer and further including front side contacts on a side receiving radiation and back side contacts on the opposed sides, wherein the silicon layers have a total thickness of no more than 100 microns.

15. The solar cell of claim 14, wherein the silicon adjacent the front side is textured on the front side thereof and planar on the backside thereof.

16. The solar cell of claim 14, wherein the silicon layers consist of three silicon layers.

17. The solar cell of claim 14, wherein the total thickness is no more than 60 microns.

18. A method for fabricating a photovoltaic solar cell on a thick wafer, comprising the steps of:

a. forming a porous layer of silicon on the upper surface of a heavily doped silicon wafer of a first conductivity type

b. epitaxially growing a moderately doped first layer of silicon of the first conductivity type on the upper surface of the porous silicon layer, wherein said epitaxial growth process induces the formation by autodoping of a moderately doped second layer of the first conductivity type in contact with the porous layer and within the first layer; and

c. epitaxially growing a moderately doped third layer of silicon of a second conductivity type other than the first conductivity type on the upper surface of the second layer.

19. The method as in claim 18, further comprising texturing the upper surface of the third layer opposite the first layer.

20. The method as in claim 19, further comprising forming a passivation layer on top of the textured upper surface of the third layer.

21. The method as in claim 20, further comprising depositing an anti-reflective layer on top of the passivation layer.

22. The method as in claim 21, further comprising depositing a multiplicity of contacts on top of the anti-reflective coating.

23. The method as in claim 22, further comprising firing said PV solar cell to sinter the multiplicity of contacts in order to form ohmic contacts with said the third layer through the passivating layer and the anti-reflective coating.

24. The method as in claim 23, further comprising clamping the upper surface of said PV solar cell with a wafer clamp.

25. The method as in claim 24, further comprising separating said porous silicon layer in an exfoliation process including movement of the wafer clamp relative to the thick wafer.

26. The method as in claim 25, wherein the exfoliation process-includes a mechanical fracturing process.

27. The method as in claim 25, further comprising removing the portion of the porous silicon layer remaining in contact with the second layer after the exfoliation process.

28. The method as in claim 27, further comprising forming of a second passivation layer on top of the second layer.

29. The method as in claim 28, wherein the second passivation layer comprises a layer of silicon oxide grown using a rapid thermal oxidation process.

30. The method as in claim 28, wherein the second passivation layer comprises a layer of amorphous silicon deposited using chemical vapor deposition.

31. The method as in claim 28, further comprising the steps of:

depositing a patterned layer of resist on top of the second passivation layer, wherein the layer of resist has a multiplicity of openings;

etching openings in the second passivation layer through openings in the said patterned layer of resist; and

thereafter removing the patterned layer of resist.

32. The method as in claim 31, further comprising depositing a conducting layer on top of the second passivation layer, wherein said conducting layer fills the openings in said second passivation layer.

33. The method as in claim 32, further comprising firing the photovoltaic solar cell to sinter said conducting layer to make ohmic contact with the second layer through the openings in the second passivation layer.

34. The method as in claim 33, further comprising depositing contacts on top of the conducting layer, wherein the contacts connect with the second layer through the conducting layer.

35. The method cell as in claim 18, wherein the porous layer is formed by electrochemical etching.

36. The method as in claim 18, further comprising smoothing the upper surface of the porous layer prior to growing the first layer.

37. The method as in claim 36, wherein the smoothing step includes rapid thermal processing.