SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20100108987A1
• Filed: 04/09/2008
• Published: 05/06/2010
• Est. Priority Date: 04/16/2007
• Status: Active Grant

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Ishida, Masahiko
• Granted Patent: US 8,421,129 B2
• Time in Patent Office: Days
• US Class Current: 257/20
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/484 characterised by the channel regions
• CPC Class Codes: H10K 71/191 characterised by provisions for the orientation or alignment of the layer to be deposited
• CPC Class Codes: H10K 85/221 Carbon nanotubes

Abstract

A CNT channel layer of a transistor is cut along a direction perpendicular to the channel to form a plurality of CNT patches, which are used to connect between a source and a drain. The arrangement of the CNT channel layer formed of a plurality of CNT patches can increase the probability that part of CNT patches becomes a semiconductive CNT patch. Since part of a plurality of CNT patches forming the channel layer is formed of a semiconductive CNT patch, a transistor having a good on/off ratio can be provided.

Claims

1. A semiconductor device comprising:

a source electrode, a drain electrode, and a channel layer provided between the source electrode and the drain electrode, the channel layer being formed of (N+1) carbon nanotube patches (N is a positive integer) each having a size smaller than a channel length in a direction of a channel, the carbon nanotube patches connecting between the source electrode and the drain electrode.

2. The semiconductor device as recited in claim 1, wherein an adjacent carbon nanotube patch is arranged so as to overlap a carbon nanotube patch of a different layer with an overlap width of 1 μ

m or less.

3. The semiconductor device as recite in claim 1, wherein at least one of the (N+1) carbon nanotube patches includes at least one semiconductive carbon nanotube.

4. The semiconductor device as recited in claim 1 wherein N is at least 20.

5. The semiconductor device as recited in any one of claims 1 to 4, wherein more than two-thirds, as a theoretical abundance ratio, of the carbon nanotubes forming the patch are semiconductive carbon nanotubes.

6. A method of manufacturing a semiconductor device, comprising:

a step of forming a first carbon nanotube film in which carbon nanotubes are dispersed between a source electrode and a drain electrode on a substrate;

a step of cutting the first carbon nanotube film perpendicular to a channel direction to form first carbon nanotube patches;

a step of forming a second carbon nanotube film between the source electrode and the drain electrode; and

a step of cutting the second carbon nanotube film perpendicular to the channel direction to form second carbon nanotube patches so as to fill a gap between the first carbon nanotube patches and a gap between the source electrode and the drain electrode.

7. The method of manufacturing a semiconductor device as recited in claim 6, wherein the substrate comprises an insulating material including one of a plastic material, a ceramic material, and a silicon oxide.

8. The method of manufacturing a semiconductor device as recited in claim 6, wherein the carbon nanotubes are produced by one of a laser abrasion method, an arc discharge method, a chemical vapor deposition method (CVD), and a HiPCO (high-pressure carbon monoxide) method.

9. The method of manufacturing a semiconductor device as recited in claim 6 wherein the first and second carbon nanotube films are produced by one of a method of attaching the carbon nanotubes in a vapor phase and a method of dispersing the carbon nanotubes in a solvent or the like and attaching the carbon nanotubes via a liquid phase.