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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100109003A1
  • Filed: 10/23/2009
  • Published: 05/06/2010
  • Est. Priority Date: 10/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a gate insulating layer over the gate electrode layer;

    a semiconductor layer over the gate insulating layer;

    an oxide semiconductor layer over the semiconductor layer; and

    a source and drain electrode layers over the oxide semiconductor layer, and electrically connected to the oxide semiconductor layer,wherein the oxide semiconductor layer contains indium, gallium, and zinc,wherein a thickness of the semiconductor layer is smaller than a thickness of the oxide semiconductor layer, andwherein an electrical conductivity of the semiconductor layer is higher than an electrical conductivity of the oxide semiconductor layer.

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