LIGHT EMITTING ELEMENT WITH A PLURALITY OF CELLS BONDED, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE USING THE SAME

• US 20100109031A1
• Filed: 01/11/2010
• Published: 05/06/2010
• Est. Priority Date: 06/30/2004
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: LEE, Chung-Hoon, LEE, Keon-Young, YVES, Lacroix
• Granted Patent: US 7,871,839 B2
• Time in Patent Office: Days
• US Class Current: 257/93
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05B 45/36 Circuits for reducing or suppressing harmonics, ripples or electromagnetic interferences [EMI]
• CPC Class Codes: H05B 45/40 Details of LED load circuits
• CPC Class Codes: H05B 45/42 Antiparallel configurations

Abstract

The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series. Accordingly, it is possible to simplify a manufacturing process of a light emitting device for illumination capable of being used with a household AC power source, to decrease a fraction defective occurring in manufacturing a light emitting device for illumination, and to mass-produce the light emitting device for illumination. Further, there is an advantage in that DC driving efficiency can be enhanced in an AC operation by installing a predetermined rectifying circuit outside the light emitting element.

Claims

1. A light emitting diode, comprising:

a substrate;

a plurality of light emitting cells arranged on the substrate;

an upper electrode arranged on each light emitting cell; and

a lower electrode arranged between the substrate and each light emitting cell,

wherein the lower electrode arranged under one of the plurality of light emitting cells is coupled to the upper electrode arranged on another one of the plurality of light emitting cells adjacent to the one of the plurality of light emitting cells.

2. The light emitting diode of claim 1, further comprising an insulation layer arranged between the substrate and the lower electrode, the substrate comprising an electrically conductive substrate.

3. The light emitting diode of claim 1, further comprising an insulation layer arranged on a side surface of each light emitting cell.

4. The light emitting diode of claim 1, wherein a portion of the lower electrode is exposed in each light emitting cell.

5. The light emitting diode of claim 1, wherein the lower electrode is coupled to the upper electrode arranged on one of the plurality of light emitting cells adjacent to the one of the plurality of light emitting cells using an air-bridge process or a step coverage process.

6. The light emitting diode of claim 1, wherein a group of the plurality of light emitting cells is configured to emit light in response to application of a forward bias cycle of an alternating current (AC) power, and

wherein another group of the plurality of light emitting cells is configured to emit light in response to application of a reverse bias cycle of the AC power.

7. The light emitting diode of claim 6, wherein at least one light emitting cell of the group of the plurality of light emitting cells configured to emit light in response to application of the forward bias cycle of the AC power is also configured to emit light in response to application of the reverse bias cycle of the AC power.

8. A light emitting diode, comprising:

a substrate;

a plurality of light emitting cells arranged on the substrate;

an upper electrode arranged on each light emitting cell; and

a lower electrode arranged between the substrate and each light emitting cell,

wherein the lower electrode arranged under one of the plurality of light emitting cells is coupled to the upper electrode of each of two light emitting cells adjacent to the one of the plurality of light emitting cells.

9. The light emitting diode of claim 8, wherein the upper electrode arranged on one light emitting cell is coupled to the lower electrode arranged under each of two adjacent light emitting cells.

10. The light emitting diode of claim 8, further comprising an insulation layer arranged between the substrate and the lower electrode, the substrate comprising an electrically conductive substrate.

11. The light emitting diode of claim 8, further comprising an insulation layer arranged on a side surface of each light emitting cell.

12. The light emitting diode of claim 8, wherein a portion of the lower electrode is exposed in each light emitting cell.

13. The light emitting diode of claim 8, wherein the lower electrode is coupled to the upper electrode arranged on one of the plurality of light emitting cells adjacent to the one of the plurality of light emitting cells using an air-bridge process or a step coverage process.

14. A light emitting diode, comprising:

a substrate;

a plurality of light emitting cells arranged on the substrate;

an upper electrode arranged on each light emitting cell;

a lower electrode arranged between the substrate and each light emitting cell; and

a light emitting cell block comprising at least one light emitting cell of the plurality of light emitting cells,

wherein the light emitting cell block is configured to emit light in response to application of a forward bias cycle of an alternating current (AC) power, and

wherein the lower electrode of an end portion of the light emitting cell block is coupled to ii the upper electrode of each of two light emitting cells adjacent to the end portion of the light emitting cell block.

15. The light emitting diode of claim 14, wherein the upper electrode of another end portion of the light emitting cell block is coupled to the lower electrode of each of two light emitting cells adjacent to the another end portion of the light emitting cell block.

16. The light emitting diode of claim 14, further comprising an insulation layer arranged between the substrate and the lower electrode, the substrate comprising an electrically conductive substrate.

17. The light emitting diode of claim 14, further comprising an insulation layer arranged on a side surface of each light emitting cell.

18. The light emitting diode of claim 14, wherein a portion of the lower electrode is exposed in each light emitting cell.

19. The light emitting diode of claim 14, wherein the lower electrode is coupled to the upper electrode using an air-bridge process or a step coverage process.

20. A method of manufacturing a light emitting diode, comprising:

forming a plurality of light emitting cells on a first substrate;

disposing a plurality of electrodes on a second substrate; and

coupling the plurality of light emitting cells.

21. The method of claim 20, wherein forming the plurality of light emitting cells comprises:

growing a first-type semiconductor layer and a second-type semiconductor layer on the first substrate; and

separating the first-type semiconductor layer and the second-type semiconductor layer on the first substrate into individual cells.

22. The method of claim 21, wherein coupling the plurality of light emitting cells comprises:

respectively bonding the plurality of electrodes disposed on the second substrate to the first-type semiconductor layer of each of the plurality of light emitting cells;

removing the first substrate; and

coupling the second-type semiconductor layer of each of the plurality of light emitting cells to the electrode of the adjacent light emitting cell using an air-bridge process or step cover process.