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FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100109073A1
  • Filed: 10/23/2009
  • Published: 05/06/2010
  • Est. Priority Date: 11/06/2008
  • Status: Abandoned Application
First Claim
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1. An apparatus comprising:

  • a semiconductor substrate having a trench formed therein, the trench including a device isolation film;

    an oxide film formed over the semiconductor substrate including the trench;

    a nitride film pattern inserted into the oxide film and formed at a sidewall of the trench; and

    a polysilicon pattern formed over the oxide film including the nitride film pattern.

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