FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20100109073A1
• Filed: 10/23/2009
• Published: 05/06/2010
• Est. Priority Date: 11/06/2008
• Status: Abandoned Application

• Current Assignee: Dongbu HiTek Co., Ltd. (DB HiTek Co., Ltd.)
• Original Assignee: Dongbu HiTek Co., Ltd. (DB HiTek Co., Ltd.)
• Inventors: Park, Jin-Ha
• Application Number:
  US12/604,665
• Publication Number:
  US 20100109073A1
• Time in Patent Office: Days
• US Class Current: 257/324
• CPC Class Codes: H01L 29/40117 the electrodes comprising a charge-trapping insulator
• CPC Class Codes: H01L 29/42352 with the gate at least partly formed in a trench
• CPC Class Codes: H01L 29/66833 with a charge trapping gate insulator, e.g. MNOS transistors
• CPC Class Codes: H01L 29/792 with charge trapping gate insulator, e.g. MNOS-memory transistors
• CPC Class Codes: H01L 29/7926 Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
• CPC Class Codes: H10B 43/30 characterised by the memory core region

Abstract

A flash memory device includes a semiconductor substrate having a trench formed therein, the trench including a device isolation film, an oxide film formed over the semiconductor substrate including the trench, a nitride film pattern inserted into the oxide film and formed at a sidewall of the trench, and a polysilicon pattern formed over the oxide film including the nitride film pattern. A method for manufacturing a flash memory device includes forming a first oxide film over the semiconductor substrate including the trench, forming the nitride film pattern at the sidewall of the trench provided with the first oxide film and forming a second oxide film over the semiconductor substrate including the nitride film pattern, forming an oxide film pattern at a contact surface between the nitride film pattern and the semiconductor substrate and a side of the nitride film pattern by partially removing the first oxide film and the second oxide film formed over the bottom of the trench and the semiconductor substrate, and forming a third oxide film over the semiconductor substrate including the oxide film pattern to form the oxide cover film into which the nitride film pattern is inserted.

Claims

1. An apparatus comprising:

a semiconductor substrate having a trench formed therein, the trench including a device isolation film;

an oxide film formed over the semiconductor substrate including the trench;

a nitride film pattern inserted into the oxide film and formed at a sidewall of the trench; and

a polysilicon pattern formed over the oxide film including the nitride film pattern.

2. The apparatus of claim 1, wherein the nitride film pattern is formed parallel with the sidewall of the trench and vertically with respect to the bottom of the trench.

3. The apparatus of claim 1, wherein the polysilicon pattern is formed over the bottom and corner areas of the trench to cover the nitride film pattern.

4. The apparatus of claim 1, including:

a first impurity area formed on the bottom of the trench at a side of the polysilicon pattern on the semiconductor substrate; and

a second impurity area formed on the semiconductor substrate at the other side of the polysilicon pattern.

5. The apparatus of claim 1, wherein a length of the nitride film pattern is controlled depending on a depth of the trench.

6. The apparatus of claim 1, wherein a thickness of the nitride film pattern is controlled depending on a depth of the trench.

7. The apparatus of claim 1, wherein the trench is provided with two polysilicon patterns spaced apart from each other.

8. The apparatus of claim 1, wherein the substrate, trench, oxide film, nitride film pattern and polysilicon pattern form components in a flash memory cell.

20. The method of claim 7, wherein the substrate, trench, oxide film, nitride film pattern and polysilicon pattern form components in a flash memory cell.

9. A method comprising:

forming a trench in a semiconductor substrate provided with a device isolation film;

forming an oxide cover film over the semiconductor substrate including the trench, the oxide cover film including a nitride film pattern; and

forming a polysilicon pattern over the oxide cover film including the nitride film pattern,

wherein the nitride film pattern is inserted into the oxide cover film and formed at a sidewall of the trench.

10. The method of claim 9, wherein the step of forming an oxide film over the semiconductor substrate including the trench includes:

forming a first oxide film over the semiconductor substrate including the trench;

forming the nitride film pattern at the sidewall of the trench provided with the first oxide film and forming a second oxide film over the semiconductor substrate including the nitride film pattern;

forming an oxide film pattern at a contact surface between the nitride film pattern and the semiconductor substrate and a side of the nitride film pattern by partially removing the first oxide film and the second oxide film formed over the bottom of the trench and the semiconductor substrate; and

forming a third oxide film over the semiconductor substrate including the oxide film pattern to form the oxide cover film into which the nitride film pattern is inserted.

11. The method of claim 10, wherein the first oxide film is formed between the sidewall of the trench and the nitride film pattern when the nitride film pattern is formed at the sidewall of the trench.

12. The method of claim 10, wherein the first oxide film and the third oxide film are formed by a thermal process.

13. The method of claim 10, wherein the second oxide film is formed by a deposition process.

14. The method of claim 10, wherein the nitride film pattern is formed at the sidewall of the trench over the first oxide film by an anisotropic etching process after forming a nitride film over the first oxide film.

15. The method of claim 9, wherein the nitride film pattern is formed parallel with the sidewall of the trench and vertically with respect to the bottom of the trench.

16. The method of claim 9, wherein the polysilicon pattern is formed over the bottom and corner areas of the trench to cover the nitride film pattern.

17. The method of claim 9, wherein a length of the nitride film pattern is controlled depending on a depth of the trench.

18. The method of claim 9, wherein a thickness of the nitride film pattern is controlled depending on a depth of the trench.

19. The method of claim 9, wherein the trench is provided with two polysilicon patterns spaced apart from each other.