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Method of Fabricating A Fin Field Effect Transistor (FinFET) Device

  • US 20100109086A1
  • Filed: 11/06/2008
  • Published: 05/06/2010
  • Est. Priority Date: 11/06/2008
  • Status: Active Grant
First Claim
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1. A method comprising:

  • depositing, on a silicon substrate, a first dummy structure having a first sidewall and a second sidewall separated by a first width;

    depositing, on the silicon substrate, a second dummy structure concurrently with depositing the first dummy structure, the second dummy structure having a third sidewall and a fourth sidewall separated by a second width, wherein the second width is substantially greater than the first width;

    wherein the first dummy structure is used to form a first pair of fins separated by approximately the first width; and

    wherein the second dummy structure is used to form a second pair of fins separated by approximately the second width.

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