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MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING

  • US 20100109109A1
  • Filed: 03/05/2009
  • Published: 05/06/2010
  • Est. Priority Date: 10/31/2008
  • Status: Active Grant
First Claim
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1. A magnetic memory element utilizing spin transfer switching, comprising:

  • a pinned layer;

    a tunneling barrier layer, disposed on the pinned layer; and

    a free layer structure, comprising a composite free layer, wherein the composite free layer comprises;

    a first free layer, disposed on the tunneling barrier layer and having a first spin polarization factor and a first saturation magnetization;

    an insert layer, disposed on the first free layer; and

    a second free layer, disposed on the insert layer and having a second spin polarization factor and a second saturation magnetization, whereinthe first spin polarization factor is larger than the second spin polarization factor, the second saturation magnetization is smaller than the first saturation magnetization, and a magnetization vector of the first free layer and a magnetization vector of the second free layer are arranged as parallel-coupled.

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