ORGANIC LIGHT EMITTING DIODE DISPLAY

• US 20100109512A1
• Filed: 05/21/2009
• Published: 05/06/2010
• Est. Priority Date: 11/05/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: SHIN, Hye-Jin
• Granted Patent: US 8,378,569 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/87 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 71/70 Testing, e.g. accelerated lifetime tests
• CPC Class Codes: H10K 71/831 Aging

Abstract

An organic light emitting diode (OLED) display. The OLED display includes a first substrate member, a first conductive wire having a contact region and formed over the first substrate member, an insulating layer including a plurality of wire contact holes exposing a part of the contact region of the first conductive wire and formed over the first conductive wire, a second conductive wire formed over the first conductive wire and connected to the first conductive wire through the plurality of wire contact holes of the insulating layer, a sealant formed over the second conductive wire, a sealing member formed over the sealant, and a fill-up layer disposed above or under the contact region of the first conductive wire.

Claims

1. An organic light emitting diode (OLED) display comprising:

a first substrate member;

a first conductive wire having a contact region and formed over the first substrate member;

an insulating layer including a plurality of wire contact holes exposing a part of the contact region of the first conductive wire and formed over the first conductive wire;

a second conductive wire formed over the first conductive wire and connected to the first conductive wire through the plurality of wire contact holes of the insulating layer;

a sealant formed over the second conductive wire;

a sealing member formed over the sealant; and

a fill-up layer disposed above or under the contact region of the first conductive wire.

2. The OLED display of claim 1, wherein the insulating layer disposed over the contact region having the plurality of wire contact holes is thinner than an average thickness of the insulating layer.

3. The OLED display of claim 2, wherein the first conductive wire is broken at regular intervals.

4. The OLED display of claim 3, wherein the contact region is an end of the broken first conductive wire.

5. The OLED display of claim 3, wherein the first conductive wire includes at least one metal of chromium (Cr), molybdenum (Mo), titanium (Ti), and tantalum (Ta).

6. The OLED display of claim 2, wherein the first conductive wire and the second conductive wire are formed to be flat.

7. The OLED display of claim 1, wherein the fill-up layer is disposed under the first conductive wire.

8. The OLED display of claim 7, further comprising a thin film transistor having a semiconductor layer,

wherein the fill-up layer is formed of the same material as that of the semiconductor layer of the thin film transistor through the same manufacturing process.

9. The OLED display of claim 1, wherein the fill-up layer is disposed over the first conductive wire.

10. The OLED display of claim 9, further comprising a thin film transistor, an organic light emitting diode, and a planarization layer disposed between the thin film transistor and the organic light emitting diode,

wherein the fill-up layer is formed of the same material as that of the planarization layer through the same manufacturing process.

11. The OLED display of claim 9, further comprising an organic light emitting diode having a first electrode, an organic emission layer formed over the first electrode, and a second electrode formed over the organic emission layer,

wherein the fill-up layer is formed of the same material as that of the first electrode of the organic light emitting diode through the same manufacturing process.

12. A method of forming an organic light emitting diode (OLED) display having a first substrate member, a first conductive wire having a contact region and formed over the first substrate member, the method comprising:

forming an insulating layer having a contact area including a plurality of wire contact holes formed over the first conductive wire and having a varying thickness along the contact area, wherein the thickness over the contact area is thinner than the area not over the contact area;

forming a second conductive wire formed over the first conductive wire and connected to the first conductive wire;

forming a sealant over the second conductive wire;

forming a sealing member over the sealant; and

forming a fill-up layer above or under the contact region of the first conductive wire.

13. The method of claim 12, wherein the first conductive wire is broken at regular intervals and wherein the contact region is an end of the broken first conductive wire.

14. The method of claim 13, wherein the first conductive wire includes at least one metal of chromium (Cr), molybdenum (Mo), titanium (Ti), and tantalum (Ta).

15. The method of claim 12, wherein the first conductive wire and the second conductive wire are formed to be flat.

16. The method of claim 12, wherein the fill-up layer is disposed under the first conductive wire.

17. The method of claim 16, further comprising forming a thin film transistor having a semiconductor layer, wherein the fill-up layer is the same material as that of the semiconductor layer of the thin film transistor and is formed through the same manufacturing process.

18. The method of claim 12, wherein the fill-up layer is disposed over the first conductive wire.

19. The method of claim 18, further comprising:

forming a thin film transistor;

forming an organic light emitting diode; and

forming a planarization layer between the thin film transistor and the organic light emitting diode,

wherein the fill-up layer is the same material as that of the planarization layer and is formed through the same manufacturing process.

20. The method of claim 18, further comprising:

forming an organic light emitting diode having a first electrode;

forming an organic emission layer over the first electrode; and

forming a second electrode formed over the organic emission layer,

wherein the fill-up layer is formed of the same material as that of the first electrode of the organic light emitting diode through the same manufacturing process.