LOGIC CIRCUIT
First Claim
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1. A logic circuit comprising:
- a depletion transistor having a gate, a source, and a drain,an enhancement transistor having a gate, a source, and a drain,a first terminal electrically connected to the gate of the enhancement transistor; and
a second terminal electrically connected to a portion where the enhancement transistor is connected to the depletion transistor,wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the depletion transistor, and the gate of the depletion transistor is electrically connected to the other of the source and the drain of the depletion transistor;
wherein one of the source and the drain of the enhancement transistor is electrically connected to the other of the source and the drain of the depletion transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the enhancement transistor,wherein each of the depletion transistor and the enhancement transistor includes;
a gate electrode;
a gate insulating layer provided over the gate electrode;
a first oxide semiconductor layer provided over the gate insulating layer;
a source region and a drain region in contact with part of the first oxide semiconductor layer, wherein the source region and the drain region are second oxide semiconductor layers;
a source electrode in contact with the source region; and
a drain electrode in contact with the drain region,wherein the enhancement transistor includes a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode, andwherein the depletion transistor does not include a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode.
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Abstract
An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 each include a gate electrode, a gate insulating layer, a first oxide semiconductor layer, a second oxide semiconductor layer, a source electrode, and a drain electrode. The transistor 102 includes a reduction prevention layer provided over a region in the first oxide semiconductor layer between the source electrode and the drain electrode.
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Citations
20 Claims
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1. A logic circuit comprising:
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a depletion transistor having a gate, a source, and a drain, an enhancement transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the enhancement transistor; and a second terminal electrically connected to a portion where the enhancement transistor is connected to the depletion transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the depletion transistor, and the gate of the depletion transistor is electrically connected to the other of the source and the drain of the depletion transistor; wherein one of the source and the drain of the enhancement transistor is electrically connected to the other of the source and the drain of the depletion transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the enhancement transistor, wherein each of the depletion transistor and the enhancement transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; a first oxide semiconductor layer provided over the gate insulating layer; a source region and a drain region in contact with part of the first oxide semiconductor layer, wherein the source region and the drain region are second oxide semiconductor layers; a source electrode in contact with the source region; and a drain electrode in contact with the drain region, wherein the enhancement transistor includes a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the depletion transistor does not include a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A logic circuit comprising:
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a first transistor having a gate, a source, and a drain, wherein a first clock signal is input to the gate of the first transistor, and an input signal is input to the one of the source and the drain of the first transistor; a first inverter having an input terminal and an output terminal, the input terminal of the first inverter electrically connected to the other of the source and the drain of the first transistor; a second inverter having an input terminal and an output terminal, the input terminal of the second inverter electrically connected to the output terminal of the first inverter; a third inverter having an input terminal electrically connected to the output terminal of the first inverter, and an output terminal outputting an output signal; and a second transistor having a gate, a source, and a drain, wherein a second clock signal is input to the gate of the second transistor, one of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to the output terminal of the second inverter, wherein each of the first inverter and the second inverter includes; a depletion transistor having a gate, a source, and a drain, an enhancement transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the enhancement transistor; a second terminal electrically connected to a portion where the enhancement transistor is connected to the depletion transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the depletion transistor, and the gate of the depletion transistor is electrically connected to the other of the source and the drain of the depletion transistor; wherein one of the source and the drain of the enhancement transistor is electrically connected to the other of the source and the drain of the depletion transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the enhancement transistor, wherein each of the depletion transistor and the enhancement transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; a first oxide semiconductor layer provided over the gate insulating layer; a source region and a drain region in contact with part of the first oxide semiconductor layer, wherein the source region and the drain region are second oxide semiconductor layers; a source electrode in contact with the source region; and a drain electrode in contact with the drain region, wherein the enhancement transistor includes a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the depletion transistor does not include a reduction prevention layer over the first oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (7, 8, 9, 10)
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11. A logic circuit comprising:
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a depletion transistor having a gate, a source, and a drain, an enhancement transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the enhancement transistor; a second terminal electrically connected to a portion where the enhancement transistor is connected to the depletion transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the depletion transistor, and the gate of the depletion transistor is electrically connected to the other of the source and the drain of the depletion transistor; wherein one of the source and the drain of the enhancement transistor is electrically connected to the other of the source and the drain of the depletion transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the enhancement transistor, wherein each of the depletion transistor and the enhancement transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; an oxide semiconductor layer provided over the gate insulating layer; and a source electrode and a drain electrode in contact with part of the oxide semiconductor layer, wherein the enhancement transistor includes a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the depletion transistor does not include a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (12, 13, 14, 15)
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16. A logic circuit comprising:
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a first transistor having a gate, a source, and a drain, wherein a first clock signal is input to the gate of the first transistor, and an input signal is input to the one of the source and the drain of the first transistor; a first inverter having an input terminal and an output terminal, the input terminal of the first inverter electrically connected to the other of the source and the drain of the first transistor; a second inverter having an input terminal and an output terminal, the input terminal of the second inverter electrically connected to the output terminal of the first inverter; a third inverter having an input terminal electrically connected to the output terminal of the first inverter, and an output terminal outputting an output signal; and a second transistor having a gate, a source, and a drain, wherein a second clock signal is input to the gate of the second transistor, one of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to the output terminal of the second inverter, wherein each of the first inverter and the second inverter includes; a depletion transistor having a gate, a source, and a drain, an enhancement transistor having a gate, a source, and a drain, a first terminal electrically connected to the gate of the enhancement transistor; a second terminal electrically connected to a portion where the enhancement transistor is connected to the depletion transistor, wherein a high power supply voltage terminal is electrically connected to one of the source and the drain of the depletion transistor, and the gate of the depletion transistor is electrically connected to the other of the source and the drain of the depletion transistor; wherein one of the source and the drain of the enhancement transistor is electrically connected to the other of the source and the drain of the depletion transistor, and a low power supply voltage terminal is electrically connected to the other of the source and the drain of the enhancement transistor; wherein each of the depletion transistor and the enhancement transistor includes; a gate electrode; a gate insulating layer provided over the gate electrode; an oxide semiconductor layer provided over the gate insulating layer; and a source electrode and a drain electrode in contact with part of the oxide semiconductor layer, wherein the enhancement transistor includes a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode, and wherein the depletion transistor does not include a reduction prevention layer over the oxide semiconductor layer, the source electrode, and the drain electrode. - View Dependent Claims (17, 18, 19, 20)
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Specification