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Method of making a diode read/write memory cell in a programmed state

  • US 20100110752A1
  • Filed: 10/02/2009
  • Published: 05/06/2010
  • Est. Priority Date: 12/19/2002
  • Status: Active Grant
First Claim
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1. A method of making a diode, comprising:

  • forming a first electrode;

    forming a semiconductor region in electrical contact with the first electrode, wherein the semiconductor region comprises a p-n or a p-i-n junction in at least one silicon, germanium or silicon-germanium layer;

    forming a titanium layer on the semiconductor region;

    forming a titanium nitride layer on the titanium layer;

    reacting the titanium layer with the semiconductor region to form a titanium silicide, titanium germanide, or titanium silicide-germanide layer on the semiconductor region;

    removing the titanium nitride layer and a remaining portion of the titanium layer after the step of reacting; and

    forming a second electrode in electrical contact with the titanium silicide, titanium germanide or titanium silicide-germanide layer.

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