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VARIABLE RESISTIVE MEMORY PUNCHTHROUGH ACCESS METHOD

  • US 20100110756A1
  • Filed: 10/30/2008
  • Published: 05/06/2010
  • Est. Priority Date: 10/30/2008
  • Status: Active Grant
First Claim
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1. A method comprising:

  • switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the variable resistive data cell in a first direction, the write current provided by a transistor being electrically coupled to the variable resistive data cell and a source line, the write current passing through the transistor in punchthrough mode; and

    switching the variable resistive data cell from a low resistance state to a high resistance state by passing a write current through the variable resistive data cell in a second direction opposing the first direction, the write current provided by the transistor, the write current passing through the transistor in punchthrough mode.

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