PIXEL STRUCTURE AND METHOD FOR FORMING THE SAME
First Claim
1. A method for forming a pixel structure, the pixel structure having at least one transistor and a first storage capacitor electrically connected to the transistor, the method comprising:
- forming a first conductive layer;
covering an interlayer dielectric layer having a first opening on the first conductive layer;
forming a second conductive layer on a part of the interlayer dielectric layer, the second conductive layer electrically connecting to the first conductive layer through the first opening;
covering a passivation layer having a second opening on the transistor and the second conductive layer; and
forming a third conductive layer on a part of the passivation layer, the third conductive layer electrically connecting to the transistor through the second opening, wherein the first storage capacitor is formed by the third conductive layer, the passivation layer, and the second conductive layer.
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Abstract
A pixel structure comprising at least one transistor, a first storage capacitor, a first conductive layer, an interlayer dielectric layer, a second conductive layer, a passivation layer, and a third conductive layer is provided. The first storage capacitor is electrically connected to the transistor. The interlayer dielectric layer having at least one first opening covers the first conductive layer. The second conductive layer is formed on a part of the interlayer dielectric layer and is electrically connected to the first conductive layer through the first opening. The passivation layer having at least one second opening covers the transistor and the second conductive layer. The third conductive layer is formed on a part of the passivation layer and is electrically connected to the transistor through the second opening. The first storage capacitor is formed by the third conductive layer, the passivation layer, and the second conductive layer.
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Citations
12 Claims
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1. A method for forming a pixel structure, the pixel structure having at least one transistor and a first storage capacitor electrically connected to the transistor, the method comprising:
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forming a first conductive layer; covering an interlayer dielectric layer having a first opening on the first conductive layer; forming a second conductive layer on a part of the interlayer dielectric layer, the second conductive layer electrically connecting to the first conductive layer through the first opening; covering a passivation layer having a second opening on the transistor and the second conductive layer; and forming a third conductive layer on a part of the passivation layer, the third conductive layer electrically connecting to the transistor through the second opening, wherein the first storage capacitor is formed by the third conductive layer, the passivation layer, and the second conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification