Method for Producing Semiconductor Chips using Thin Film Technology

• US 20100112789A1
• Filed: 01/08/2010
• Published: 05/06/2010
• Est. Priority Date: 07/30/2004
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Andreas Ploessl, Berthold Hahn, Stephan Kaiser, Volker Harle
• Inventors: HARLE, Volker, PLOESSL, Andreas, KAISER, Stephan, HAHN, Berthold
• Granted Patent: US 8,728,937 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 23/3185 the coating covering also the sidewalls of the semiconductor body
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/0103 Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Claims

1. A method for producing thin film semiconductor chips, the method comprising the steps:

applying an active layer sequence, which is suitable for generating electromagnetic radiation, on a growth substrate,

forming a reflective electrically conductive contact material layer on the active layer sequence,

patterning the active layer sequence and the contact material layer to form active layer stacks, which are separate from one another, on the growth substrate,

applying a flexible electrically conductive foil to the reflective electrically conductive contact material layer, and

at least partially removing the growth substrate.

2. The method as claimed in claim 1, wherein said electrically conductive foil is a carbon foil.

3. The method as claimed in claim 1, wherein said electrically conductive foil has a thickness equal to or less than 100 μ

m.

4. The method as claimed in claim 1, wherein the electrically conductive contact material layer contains a metal.

5. The method as claimed in claim 1, further comprising forming a passivation layer at least on parts of side faces of the active layer stacks which are uncovered during the patterning step.

6. The method as claimed in claim 1, further comprising applying an electrically conductive reinforcing layer to the reflective electrically conductive contact material layer.

7. The method as claimed in claim 6, wherein the electrically conductive reinforcing layer contains a metal.

8. The method as claimed in claim 1, further comprising, prior to removing the growth substrate, joining a rigid auxiliary carrier to the flexible electrically conductive foil.

9. The method as claimed in claim 1, wherein, after removing the growth substrate, applying electrically conductive contact locations to a side of the active layer sequence of the active layer stacks on which the growth substrate was previously located.

10. The method as claimed in claim 9, wherein the electrically conductive contact locations contain a metal.

11. The method as claimed in claim 9, further comprising applying an intermediate carrier to the electrically conductive contact locations, and removing the flexible electrically conductive foil so that separated thin film semiconductor chips are present on the intermediate carrier.

12. The method as claimed in claim 11, wherein the intermediate carrier used is a further foil.

13. The method as claimed in claim 11, further comprising applying a passivation layer to an entire area of side faces of the active layer stacks.

14. The method as claimed in claim 9, further comprising, following removal of the growth substrate, applying an intermediate carrier to the side of the active layer stacks on which the growth substrate was previously located, and then removing the flexible, electrically conductive foil, so that the thin film semiconductor chips are located separated on the intermediate carrier.

15. The method as claimed in claim 14, wherein the intermediate carrier is a further foil.

16. A method for producing thin film semiconductor chips, the method comprising the steps of:

applying an active layer sequence, which is suitable for generating electromagnetic radiation, on a growth substrate;

forming a reflective electrically conductive contact material layer on the active layer sequence;

forming composite layer stacks separated from each other on the growth substrate, each of the composite layer stacks comprising a part of the active layer sequence and a part of the reflective electrically conductive contact material layer;

applying a flexible electrically conductive foil to the reflective electrically conductive contact material layer; and

at least partially removing the growth substrate.

17. The method as claimed in claim 16, wherein said electrically conductive foil is a carbon foil.

18. The method as claimed in claim 16, further comprising applying an electrically conductive reinforcing layer to the reflective electrically conductive contact material layer.

19. The method as claimed in claim 16, further comprising, prior to the removal of the growth substrate, joining a rigid auxiliary carrier to the flexible electrically conductive foil.