METHOD OF FORMING ULTRA-SHALLOW JUNCTIONS FOR SEMICONDUCTOR DEVICES
First Claim
1. A method for producing a doped region in a semiconductor substrate comprising performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region.
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Abstract
A first method for producing a doped region in a semiconductor substrate includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region. A second method for producing a semiconductor device having a shallow junction region includes providing a first gas and a second gas in a container. The first gas includes a first dopant and the second gas includes a second dopant. The second method also includes implanting the first and second dopants into a semiconductor substrate using an ion. The ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant.
105 Citations
22 Claims
- 1. A method for producing a doped region in a semiconductor substrate comprising performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region.
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9. An apparatus for forming doped regions in a semiconductor substrate comprising a stage for holding a semiconductor substrate and means for implanting a carborane cluster molecule into the semiconductor substrate to form a doped region, wherein the carborane cluster molecule is a o-carborane molecule having the general formula 1,2-C2B10H12;
- or the carborane cluster molecule is selected from a group consisting of 1,5-C2B3H5, 1,2-C2B4H6, 1,2-C2B5H7 and 1,2-C2B8H10;
or the carborane cluster molecule is a o-carborane derivative.
- or the carborane cluster molecule is selected from a group consisting of 1,5-C2B3H5, 1,2-C2B4H6, 1,2-C2B5H7 and 1,2-C2B8H10;
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10. A method for producing a semiconductor device having a shallow junction region, the method comprising:
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providing a first gas and a second gas in a container, the first gas comprising a first dopant and the second gas comprising a second dopant; implanting the first dopant into a semiconductor substrate using an ion source; and implanting the second dopant into the semiconductor substrate using the ion source; wherein the ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification