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Resistive random access memory and method for manufacturing the same

  • US 20100112810A1
  • Filed: 01/05/2010
  • Published: 05/06/2010
  • Est. Priority Date: 09/13/2007
  • Status: Active Grant
First Claim
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1. A manufacturing method of resistive random access memory, comprising:

  • (a) forming an insulating layer, wherein the insulating layer has a contact hole having a first width;

    (b) forming a spacer in the contact hole, wherein the spacer has a first opening having a second width smaller than the first width;

    (c) forming a memory cell having the second width; and

    (d) forming a top electrode coupled with the memory cell.

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