Resistive random access memory and method for manufacturing the same
First Claim
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1. A manufacturing method of resistive random access memory, comprising:
- (a) forming an insulating layer, wherein the insulating layer has a contact hole having a first width;
(b) forming a spacer in the contact hole, wherein the spacer has a first opening having a second width smaller than the first width;
(c) forming a memory cell having the second width; and
(d) forming a top electrode coupled with the memory cell.
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Abstract
A resistive random access memory including, an insulating layer, a hard mask layer, a bottom electrode, a memory cell and a top electrode is provided. The insulating layer is disposed on the bottom electrode. The insulating layer has a contact hole having a first width. The hard mask layer has an opening. A portion of the memory cell is exposed from the opening and has a second width smaller than the first width. The top electrode is disposed on the insulating layer and is coupled with the memory cell.
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Citations
11 Claims
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1. A manufacturing method of resistive random access memory, comprising:
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(a) forming an insulating layer, wherein the insulating layer has a contact hole having a first width; (b) forming a spacer in the contact hole, wherein the spacer has a first opening having a second width smaller than the first width; (c) forming a memory cell having the second width; and (d) forming a top electrode coupled with the memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A manufacturing method of memory device, comprising:
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forming an insulating layer; etching the insulating layer to form a hole; forming a first electrode and a memory layer in the hole; forming a spacer in the hole and over the memory layer; and forming a second electrode over the spacer and in contact with the memory layer, the second electrode having first and second widths, wherein the first width is larger than the second width.
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Specification