METHOD OF REDUCING NON-UNIFORMITIES DURING CHEMICAL MECHANICAL POLISHING OF MICROSTRUCTURE DEVICES BY USING CMP PADS IN A GLAZED MODE
First Claim
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1. A method of planarizing a metal-containing layer formed above a substrate of a semiconductor device, the method comprising:
- removing material of said metal by performing a polishing process by establishing a relative motion between a polishing pad and said substrate;
supplying a chemically reactive slurry so as to enhance a removal rate for said metal; and
controlling said removal rate by conditioning said polishing pad so as to maintain a surface of said polishing pad in a glazed state at least in a final phase of said polishing process.
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Abstract
In sophisticated CMP recipes, the material removal may be accomplished on the basis of a chemically reactive slurry material and a reduced down force, wherein the surface topography of a finally obtained material layer may be enhanced by using, at least in a final phase, a glazed state of the polishing pad.
9 Citations
25 Claims
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1. A method of planarizing a metal-containing layer formed above a substrate of a semiconductor device, the method comprising:
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removing material of said metal by performing a polishing process by establishing a relative motion between a polishing pad and said substrate; supplying a chemically reactive slurry so as to enhance a removal rate for said metal; and controlling said removal rate by conditioning said polishing pad so as to maintain a surface of said polishing pad in a glazed state at least in a final phase of said polishing process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method, comprising:
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removing a metal material from a dielectric layer of a microstructure device by performing a first polishing process in the presence of a slurry that chemically reacts with said metal material, said first polishing process having a first removal rate for said metal material; controlling a degree of conditioning of a polishing pad in a second polishing process so as to maintain said polishing pad in a glazed state, said glazed state resulting in a second removal rate that is approximately 70 percent or less of said first removal rate of said first polishing process; and performing said second polishing process on the basis of said glazed state so as to expose surface portions of said dielectric layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of planarizing a metallization layer of a microstructure device formed above a substrate, the method comprising:
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removing excess metal of said metallization layer in a first polishing phase of a polishing process, said first polishing phase being performed on the basis of a predetermined relative speed between a polishing pad and said substrate and a predetermined down force applied to said substrate; exposing a dielectric material of said metallization layer in a second phase of said polishing process; and maintaining a degree of pad glazing at approximately 15 percent or more at least during said second polishing phase. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification