FILM DEPOSITION APPARATUS

• US 20100116209A1
• Filed: 11/10/2009
• Published: 05/13/2010
• Est. Priority Date: 11/10/2008
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: KATO, HITOSHI
• Application Number:
  US12/615,297
• Publication Number:
  US 20100116209A1
• Time in Patent Office: Days
• US Class Current: 118/730
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating

Abstract

A film deposition apparatus including a rotational member is rotated by a rotation mechanism around a vertical axis inside a chamber, a pedestal in the chamber and including substrate receiving areas formed along a circle having the vertical axis as a center, and first and second reaction gas supplying parts provided separately along a circumferential direction of the circle and supplying first and second reaction gases to the pedestal, a separating area in the rotational member and between first and second process areas to which first and second reaction gases are supplied, an evacuation port to evacuate an atmosphere inside the chamber, a separation gas supplying part in the separating area for supplying a separation gas, and an opposing surface part in the separating area on both sides of the separation gas supplying part and at a position forming a thin space between the opposing surface part and the pedestal.

Claims

1. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising:

a rotational member that is rotatable around a vertical axis inside the chamber;

a rotation mechanism configured to rotate the rotational member;

a pedestal provided in the chamber, the pedestal including a plurality of substrate receiving areas formed along a circle having the vertical axis as a center;

a first reaction gas supplying part provided in the rotational member and configured to supply a first reaction gas to the pedestal;

a second reaction gas supplying part provided in the rotational member and configured to supply a second reaction gas to the pedestal, the second reaction gas supplying part being separated from the first reaction gas supplying part along a circumferential direction of the circle;

a separating area provided in the rotational member along the circumferential direction of the circle, the separating area being arranged between a first process area to which the first reaction gas is supplied and a second process area to which the second reaction gas is supplied for separating an atmosphere of the first process area and an atmosphere of the second process area;

an evacuation port configured to evacuate an atmosphere inside the chamber;

a separation gas supplying part provided in the separating area and configured to supply a separation gas; and

an opposing surface part provided in the separating area on both sides of the separation gas supplying part in the circumferential direction of the circle and arranged at a position forming a thin space between the opposing surface part and the pedestal for allowing the separation gas to flow from the separating area to the first and second process areas.

2. The film deposition apparatus as claimed in claim 1, wherein the evacuation port is provided in the rotational member.

3. The film deposition apparatus as claimed in claim 1, wherein the evacuation port is provided on both sides of the separation area in a rotation direction of the rotational member.

4. The film deposition apparatus as claimed in claim 1, further comprising:

a flow path provided in the rotational member; and

a gas supplying mechanism configured to supply at least one of the reaction gas and the separation gas to the flow path;

wherein the gas supplying mechanism includes

an annular flow path having an outer side that is open across the entire circumference of the rotational member, and

a gas supply port provided at an outer circumference of the rotational member in a manner facing the outer side of the annular flow path.

5. The film deposition apparatus as claimed in claim 1, further comprising:

another rotational mechanism configured to rotate the pedestal in a direction opposite to a rotation direction of the rotational member.

6. The film deposition apparatus as claimed in claim 1, further comprising:

a narrow space provided between an outer edge part of the separation area and an inner circumferential surface of the chamber.

7. The film deposition apparatus as claimed in claim 1, wherein the separation area has a pressure that is higher than a pressure in the first process area and higher than a pressure in the second process area.

8. The film deposition apparatus as claimed in claim 1, wherein the separation gas supplying part includes a plurality of gas ejection holes;

wherein the plural gas ejection holes are arranged from one end to the other end either from a center part of the pedestal or a peripheral edge part of the pedestal.

9. The film deposition apparatus as claimed in claim 1, further comprising:

a heating part configured to heat the pedestal.

10. The film deposition apparatus as claimed in claim 1, wherein the opposing surface part has a size equal to or greater than 50 mm along an arc that corresponds to a route through which a wafer center passes in the circumferential direction of the circle.

11. The film deposition apparatus as claimed in claim 1, wherein the opposing surface part includes a downstream part located downstream with respect to the separation gas supplying part in the circumferential direction of the circle,

wherein the downstream part becomes wider in the circumferential direction the closer to an outer edge of the opposing surface part

12. The film deposition apparatus as claimed in claim 11, wherein the downstream part has a sector shape.