METHOD FOR PATTERNING NANOWIRES ON SUBSTRATE USING NOVEL SACRIFICIAL LAYER MATERIAL

• US 20100116780A1
• Filed: 01/06/2009
• Published: 05/13/2010
• Est. Priority Date: 11/12/2008
• Status: Active Grant

• Current Assignee: Industry-Academic Cooperation Foundation Yonsei University
• Original Assignee: Industry-Academic Cooperation Foundation Yonsei University
• Inventors: Kar, Jyoti Prakash, Myoung, Jae Min
• Granted Patent: US 8,227,348 B2
• Time in Patent Office: Days
• US Class Current: 216/13
• CPC Class Codes: B81B 2203/0361 Tips, pillars
• CPC Class Codes: B81C 1/00206 Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
• CPC Class Codes: C30B 25/005 Growth of whiskers or needles
• CPC Class Codes: C30B 25/04 Pattern deposit, e.g. by using masks
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: C30B 29/605 Products containing multiple oriented crystallites, e.g. columnar crystallites
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/0331 for lift-off processes

Abstract

A method for patterning nanowires on a substrate. The method includes procedures of preparing a substrate having a patterned sacrificial layer of barium fluoride thereon; growing nanowires on an entire surface of the resultant substrate including the patterned sacrificial layer; and removing the patterned sacrificial layer using a solvent to remove part of the nanowires on the patterned sacrificial layer such that part of the nanowires in direct contact with the substrate remains on the substrate to thereby form a nanowire pattern.

Claims

1. A method of patterning nanowire on a substrate, comprising:

preparing a substrate having a patterned sacrificial layer of barium fluoride thereon;

growing nanowires on an entire surface of the resultant substrate including the patterned sacrificial layer; and

removing the patterned sacrificial layer using a solvent to remove part of the nanowires on the patterned sacrificial layer such that part of the nanowires in direct contact with the substrate remains on the substrate to thereby form a nanowire pattern.

2. The method according to claim 1, wherein the procedure of preparing the substrate comprises:

coating a photoresist on a surface of the substrate;

patterning the photoresist on the surface of the substrate;

growing barium fluoride on the entire surface of the resultant substrate including the patterned photoresist by thermal deposition, thereby forming a sacrificial layer of barium fluoride; and

removing the patterned photoresist by lift-off to remove part of the sacrificial layer on top of the patterned photoresist such that part of the sacrificial layer in direct contact with the substrate remains on the substrate to thereby form the patterned sacrificial layer of barium fluoride.

3. The method according to claim 2, wherein the patterned photoresist is removed by acetone.

4. The method according to claim 1, wherein the procedure of preparing the substrate comprises:

growing barium fluoride on a surface of the substrate by thermal deposition to form a sacrificial layer of barium fluoride; and

patterning the sacrificial layer of barium fluoride into a predetermined pattern.

5. The method according to claim 1, wherein the procedure of preparing the substrate comprises:

depositing barium fluoride on a surface of the substrate by chemical vapor deposition to form a sacrificial layer of barium fluoride; and

patterning the sacrificial layer of barium fluoride into a predetermined pattern.

6. The method according to claim 1, wherein the sacrificial layer of barium fluoride has a polycrystalline or amorphous surface.

7. The method according to claim 1, wherein the sacrificial layer of barium fluoride is stable at a temperature range from room temperature to 1500°

C.

8. The method according to claim 1, wherein the nanowires have a composition selected from the group consisting of ZnO, GaN and Si.

9. The method according to claim 8, wherein the nanowires are grown by chemical vapor deposition or furnace method.

10. The method according to claim 1, wherein the patterned sacrificial layer of barium fluoride is removed by deionized water.

11. A sacrificial layer material forming a sacrificial layer used for patterning nanowires on a substrate, comprising barium fluoride.

12. The sacrificial layer material according to claim 11, wherein the sacrificial layer of barium fluoride is stable at a temperature range from room temperature to 1500°

C.

13. The sacrificial layer material according to claim 11, wherein the sacrificial layer of barium fluoride is removable by a deionized water solvent.

14. The sacrificial layer material according to claim 11, wherein the sacrificial layer of barium chloride is stable to acetone.