High Resolution Imaging System

• US 20100116999A1
• Filed: 12/14/2009
• Published: 05/13/2010
• Est. Priority Date: 03/26/2004
• Status: Abandoned Application

• Current Assignee: Nova R&D Incorporated (Kromek Group PLC)
• Original Assignee: Nova R&D Incorporated (Kromek Group PLC)
• Inventors: Tümer, Tümay, Clajus, Martin
• Application Number:
  US12/637,648
• Publication Number:
  US 20100116999A1
• Time in Patent Office: Days
• US Class Current: 250/370.130
• CPC Class Codes: G01T 1/247 Detector read-out circuitry for processing gain or off-set correction H04N
• CPC Class Codes: G01T 1/249 specially adapted for use in SPECT or PET SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/4847 the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
• CPC Class Codes: H04N 25/773 comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
• CPC Class Codes: Y10T 29/49126 Assembling bases

Abstract

New sensors, pixel detectors and different embodiments of multi-channel integrated circuit are disclosed. The new high energy and spatial resolution sensors use solid state detectors. Each channel or pixel of the readout chip employs low noise preamplifier at its input followed by other circuitry. The different embodiments of the sensors, detectors and the integrated circuit are designed to produce high energy and/or spatial resolution two-dimensional and three-dimensional imaging for different applications. Some of these applications may require fast data acquisition, some others may need ultra high energy resolution, and a separate portion may require very high contrast. The embodiments described herein addresses these issues and also other issues that may be useful in two and three dimensional medical and industrial imaging. The applications of the new sensors, detectors and integrated circuits addresses a broad range of applications such as medical and industrial imaging, NDE and NDI, security, baggage scanning, astrophysics, nuclear physics and medicine.

Claims

1. A method for producing a first four side abuttable detector, comprising the steps of:

providing an integrated circuit with contact pads on a surface;

producing a plurality of vias in said integrated circuit to establish a plurality of electrical contacts between at least two surfaces of said integrated circuit;

mounting a detector material sensitive to radiation on a surface of said integrated circuit to form said first four side abuttable detector, wherein said detector material covers said surface of said integrated circuit, and wherein said detector material has a plurality of electrodes;

processing a plurality of signals produced inside said detector material by said integrated circuit; and

outputting said processed plurality of signals from said first four side abuttable detector through a portion of said plurality of vias.

5. The method of claim 1, wherein said radiation is selected from the group consisting of positrons, electrons and photons.

9. The method of claim 1, further comprising mounting a second four side abuttable detector side by side with said first four side abuttable detector to form a large detector array.

13. The method of claim 1, further comprising connecting said first four side abuttable detector to a circuit board that collects data from said first four side abuttable detector.

17. The method of claim 1, wherein said detector material is selected from the group consisting of CdZnTe, CdTe, Silicon, GaAs, HgI₂, CdWO₄ and PbI₂.

2. A method for producing a first four side abuttable detector, comprising the steps of:

providing an integrated circuit with contact pads on a surface, wherein said integrated circuit has a plurality of vias;

providing a connection board with connection pads on a surface with a matching area to said integrated circuit, wherein said connection board has a plurality of vias;

providing a detector material sensitive to radiation, wherein said detector material has a two-dimensional surface area that matches said surface of said connection board wherein said vias establish an electrical contact between said detector material, connection board and said integrated circuit;

stacking said detector material, said connection board and said integrated circuit on top of one another in any order to form said first four side abuttable detector;

processing a plurality of signals produced inside said detector material by said integrated circuit; and

outputting said processed plurality of signals from said first four side abuttable detector through a portion of said plurality of vias.

6. The method of claim 2, wherein said radiation is selected from the group consisting of positrons, electrons and photons.

10. The method of claim 2, further comprising mounting a second four side abuttable detector side by side with said first four side abuttable detector to form a large detector array.

14. The method of claim 2, further comprising connecting said first four side abuttable detector to a board that collects data from said first four side abuttable detector.

18. The method of claim 2, wherein said detector material is selected from the group consisting of CdZnTe, CdTe, Silicon, GaAs, HgI₂, CdWO₄ and PbI₂.

3. A four side abuttable detector, comprising:

a material sensitive to radiation with a matching area to said integrated circuit, wherein said material has a surface with a plurality of electrodes;

an integrated circuit with contact pads on a surface, wherein said integrated circuit processes a plurality of signals produced within said detector material, and wherein said material has a two-dimensional surface area that matches said surface of said integrated circuit; and

a plurality of vias in said integrated circuit to establish an electrical contact between at least two surfaces of said integrated circuit, wherein at least one of said plurality of vias is connected to at least one of said contact pads, and wherein said material is stacked on top of said integrated circuit to form said four side abuttable detector.

7. The detector system of claim 3, wherein said radiation is selected from the group consisting of positrons, electrons and photons.

11. The detector system of claim 3, wherein said four side abuttable detector is mounted side by side with another four side abuttable detector to form a large detector array.

15. The detector system of claim 3, wherein said four side abuttable detector is connected to a board that collects data from said four side abuttable detector.

19. The detector system of claim 3, wherein said material is selected from the group consisting of CdZnTe, CdTe, Silicon, GaAs, HgI₂, CdWO₄ and PbI₂.

4. A four side abuttable detector, comprising:

a connection board with connection pads on a surface;

a detector material sensitive to radiation with electrodes on a surface, wherein said detector material has a two-dimensional surface area that matches said surface of said connection board;

an integrated circuit with connection pads on a surface, wherein said detector material, wherein said connection board and said integrated circuit are mounted on top of one another in any order, and wherein said integrated circuit processes a plurality of signals produced inside said detector material, and;

a plurality of vias in said integrated circuit and in said connection board that establish an electrical contact between said detector material, said integrated circuit and said connection board.

8. The detector system of claim 4, wherein said radiation is selected from the group consisting of positrons, electrons and photons.

12. The detector system of claim 4, wherein said four side abuttable detector is mounted side by side with another four side abuttable detector to form a large detector array.

16. The detector system of claim 4, wherein said four side abuttable detector is connected to a board that collects data from said four side abuttable detector.

20. The detector system of claim 4, wherein said detector material is selected from the group consisting of CdZnTe, CdTe, Silicon, GaAs, HgI₂, CdWO₄ and PbI₂.