LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME

• US 20100117072A1
• Filed: 04/23/2008
• Published: 05/13/2010
• Est. Priority Date: 04/27/2007
• Status: Abandoned Application

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sano, Masafumi, Ofuji, Masato, Abe, Katsumi, Hayashi, Ryo, Kumomi, Hideya
• Application Number:
  US12/596,998
• Publication Number:
  US 20100117072A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]

Abstract

To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm²V⁻¹s⁻¹, and the second electrode is connected with the drain electrode of the thin film transistor.

Claims

1. A light emitting apparatus, comprising:

a substrate;

a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and

a thin film transistor which is of an n-type and includes a channel layer and a drain electrode,

wherein;

the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate;

the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm²V<sup>−

1</sup>s<sup>−

1</sup>; and

the second electrode is connected with the drain electrode of the thin film transistor.

2. The light emitting apparatus according to claim 1, wherein:

the channel layer of the thin film transistor contains at least one element selected from the group consisting of In, Ga, and Zn; and

at least a part of the channel layer includes an amorphous oxide.

3. The light emitting apparatus according to claim 1, wherein the emission layer includes an organic compound.

4. The light emitting apparatus according to claim 1, wherein at least one of the first electrode and the second electrode includes a transparent conductive oxide.

5. The light emitting apparatus according to claim 1, further comprising an insulator inserted between the substrate and the first electrode.

6. The light emitting apparatus according to claim 5, wherein the insulator serves as a channel protecting layer.

7. The light emitting apparatus according to claim 5, wherein the insulator serves as a planarization layer for the first electrode.

8. The light emitting apparatus according to claim 1, further comprising a bank provided between pixels located adjacent to each other, for separating the emission layer.

9. The light emitting apparatus according to claim 8, wherein at least a part of a channel portion of the thin film transistor is formed in the bank.

10. The light emitting apparatus according to claim 8, further comprising a channel protecting layer,

wherein the channel protecting layer acts as the bank.

11. A method of manufacturing a light emitting apparatus, comprising:

forming, on a substrate, a thin film transistor which is of an n-type and includes a gate electrode, a line, a gate insulator, a channel layer, a source electrode, a drain electrode, and a channel protecting layer;

forming, on the substrate, a first electrode of a light emitting element in parallel with the thin film transistor;

stacking an emission layer on the first electrode;

stacking a second electrode on the emission layer and the drain electrode of the thin film transistor to connect the emission layer with the drain electrode; and

sealing a portion including at least the light emitting element on the substrate on which the light emitting element and the thin film transistor are formed,

wherein the stacking the emission layer on the first electrode is performed so as not to form the emission layer on at least a part of a surface of the drain electrode of the thin film transistor.

12. The method according to claim 11, further comprising performing hydrophobic treatment on at least the part of the surface of the drain electrode before the stacking the emission layer on the first electrode.

13. The method according to claim 12, wherein the hydrophobic treatment comprises chemical modification treatment with partially fluorinated alkanethiol, which is performed on the surface of the drain electrode.

14. The method according to claim 11, further comprising:

after the stacking the emission layer on the first electrode,

removing a part of the emission layer formed on the drain electrode.

15. The method according to claim 14, wherein the removing the part of the emission layer comprises treatment using laser ablation.