SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a gate electrode layer over a substrate;
a gate insulating layer over the gate electrode layer;
a source electrode layer and a drain electrode layer which overlap with part of the gate electrode layer with the gate insulating layer interposed therebetween; and
an oxide semiconductor layer over the gate electrode layer and in contact with the gate insulating layer located in a region between the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer is provided over the source electrode layer and the drain electrode layer and,wherein a thickness of the gate insulating layer which is over the gate electrode layer and is located in the region between the source electrode layer and the drain electrode layer is smaller than a thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer.
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Abstract
It is disclosed that a semiconductor device includes an oxide semiconductor layer provided over a gate insulating layer, a source electrode layer, and a drain electrode layer, in which a thickness of the gate insulating layer located in a region between the source electrode layer and the drain electrode layer is smaller than a thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer.
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Citations
24 Claims
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1. A semiconductor device comprising:
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a gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a source electrode layer and a drain electrode layer which overlap with part of the gate electrode layer with the gate insulating layer interposed therebetween; and an oxide semiconductor layer over the gate electrode layer and in contact with the gate insulating layer located in a region between the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer is provided over the source electrode layer and the drain electrode layer and, wherein a thickness of the gate insulating layer which is over the gate electrode layer and is located in the region between the source electrode layer and the drain electrode layer is smaller than a thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer. - View Dependent Claims (5, 8, 11, 14, 17, 20)
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2. A semiconductor device comprising:
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a gate electrode layer over a substrate; a first insulating layer over the gate electrode layer; a second insulating layer over the first insulating layer, wherein the second insulating layer overlaps with part of the gate electrode layer; a source electrode layer and a drain electrode layer which overlap with the part of the gate electrode layer with the first insulating layer and the second insulating layer interposed therebetween; and an oxide semiconductor layer over the gate electrode layer and in contact with the first insulating layer located in a region between the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer is provided over the source electrode layer and the drain electrode layer. - View Dependent Claims (3, 6, 9, 12, 15, 18, 21)
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4. A semiconductor device comprising:
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a gate electrode layer over a substrate; a first insulating layer and a second insulating layer which are sequentially stacked over the gate electrode layer; a source electrode layer and a drain electrode layer which overlap with part of the gate electrode layer, with the first insulating layer and the second insulating layer interposed therebetween; and an oxide semiconductor layer over the gate electrode layer and in contact with the second insulating layer located in a region between the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer is provided over the source electrode layer and the drain electrode layer, wherein a thickness of the second insulating layer which is over the gate electrode layer and is located in the region between the source electrode layer and the drain electrode layer is smaller than a thickness of the second insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer. - View Dependent Claims (7, 10, 13, 16, 19, 22)
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23. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; forming a source electrode layer and a drain electrode layer over the gate insulating layer; etching an upper layer portion of the gate insulating layer provided in a region between the source electrode layer and the drain electrode layer, so that a thickness of the gate insulating layer which is located in the region between the source electrode layer and the drain electrode layer is smaller than a thickness of the gate insulating layer provided between the gate electrode layer and at least one of the source electrode layer and the drain electrode layer; and forming an oxide semiconductor layer over the gate insulating layer, the source electrode layer, and the drain electrode layer.
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24. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a first insulating layer over the gate electrode layer; forming a second insulating layer over the first insulating layer; forming a source electrode layer and a drain electrode layer over the second insulating layer; etching the second insulating layer provided in a region between the source electrode layer and the drain electrode layer to expose the first insulating layer; and forming an oxide semiconductor layer over the first insulating layer, the source electrode layer, and the drain electrode layer.
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Specification