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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100117077A1
  • Filed: 11/06/2009
  • Published: 05/13/2010
  • Est. Priority Date: 11/07/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode formed over a substrate having an insulating surface;

    an insulating layer formed over the gate electrode;

    source and drain electrodes formed over the insulating layer; and

    an oxide semiconductor layer formed between a side surface of the source electrode and a side surface of the drain electrode, which face each other, so as to overlap with the gate electrode with the insulating layer interposed therebetween,wherein the oxide semiconductor layer is in contact with at least the respective side surfaces of the source and drain electrodes, andwherein a first angle formed between a surface of the substrate and the side surface of the source electrode and a second angle formed between the surface of the substrate and the side surface of the drain electrode are each greater than or equal to 20° and

    less than 90°

    .

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