Cooling Channels in 3DIC Stacks
First Claim
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1. An integrated circuit structure comprising:
- a first die comprising;
a first semiconductor substrate;
first dielectric layers over the first semiconductor substrate;
a first interconnect structure in the first dielectric layers a first plurality of channels extending from inside the first semiconductor substrate to inside the first dielectric layers; and
a first dielectric film over the first interconnect structure and sealing portions of the first plurality of channels, wherein the first plurality of channels is configured to allow a fluid to flow through.
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Abstract
An integrated circuit structure includes a die including a semiconductor substrate; dielectric layers over the semiconductor substrate; an interconnect structure including metal lines and vias in the dielectric layers; a plurality of channels extending from inside the semiconductor substrate to inside the dielectric layers; and a dielectric film over the interconnect structure and sealing portions of the plurality of channels. The plurality of channels is configured to allow a fluid to flow through.
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Citations
20 Claims
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1. An integrated circuit structure comprising:
a first die comprising; a first semiconductor substrate; first dielectric layers over the first semiconductor substrate; a first interconnect structure in the first dielectric layers a first plurality of channels extending from inside the first semiconductor substrate to inside the first dielectric layers; and a first dielectric film over the first interconnect structure and sealing portions of the first plurality of channels, wherein the first plurality of channels is configured to allow a fluid to flow through. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An integrated circuit structure comprising:
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a first die comprising; a first semiconductor substrate; a first interconnect structure comprising metal lines and vias in first dielectric layers and on a front side the first semiconductor substrate; a first opening and a second opening extending from the front side to a backside of the first semiconductor substrate; and a first plurality of channels in the first dielectric layers and connecting the first opening to the second opening; and a second die bonded to the first die. - View Dependent Claims (13, 14, 15, 16)
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17. An integrated circuit structure comprising:
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a first die comprising; a first semiconductor substrate; a through-substrate via (TSV) extending from a front surface of the first semiconductor substrate to a back surface of the first semiconductor substrate; a first interconnect structure comprising metal lines and vias in first dielectric layers and on a front side of the first semiconductor substrate; a channel extending from the front surface to the back surface of the first semiconductor substrate, wherein the channel is configured to allow a fluid to flow through; and a second die bonded to the first die and comprising; a second semiconductor substrate; a second interconnect structure comprising additional metal lines and additional vias in second dielectric layers and on a front side of the second semiconductor substrate; and a bump at a surface of the second die and electrically connected to the TSV. - View Dependent Claims (18, 19, 20)
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Specification