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Cooling Channels in 3DIC Stacks

  • US 20100117201A1
  • Filed: 11/11/2009
  • Published: 05/13/2010
  • Est. Priority Date: 11/13/2008
  • Status: Active Grant
First Claim
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1. An integrated circuit structure comprising:

  • a first die comprising;

    a first semiconductor substrate;

    first dielectric layers over the first semiconductor substrate;

    a first interconnect structure in the first dielectric layers a first plurality of channels extending from inside the first semiconductor substrate to inside the first dielectric layers; and

    a first dielectric film over the first interconnect structure and sealing portions of the first plurality of channels, wherein the first plurality of channels is configured to allow a fluid to flow through.

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