PIXEL STRUCTURE

• US 20100117529A1
• Filed: 01/12/2010
• Published: 05/13/2010
• Est. Priority Date: 09/14/2005
• Status: Active Grant

• Current Assignee: Chunghwa Picture Tubes Limited
• Original Assignee: Chunghwa Picture Tubes Limited
• Inventors: Huang, Pei-Lin, Tang, Shuenn-Jiun, Kao, Yi-Lung, Tzen, Chih-Kwang, Tsai, Ya-Ping, Wang, Liang-Yuan
• Granted Patent: US 7,932,533 B2
• Time in Patent Office: Days
• US Class Current: 313/505
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/876 comprising a resonant cavity structure, e.g. Bragg reflector pair

Abstract

A pixel structure driven by a scan line and a data line arranged on a substrate is provided. The pixel structure includes a control unit, an OEL unit and a semi-transparent reflector structure. The control unit driven by the scan line and the data line is arranged on the substrate. The OEL unit is arranged on the substrate and includes a transparent electrode, a light-emitting layer and a metal electrode. The transparent electrode is electrically connected with the control unit. The light-emitting layer is disposed on the transparent electrode. The metal electrode is disposed on the light-emitting layer. The semi-transparent reflector structure is sandwiched between the substrate and the OEL unit, and includes at least a plurality of first and second dielectric layers. The first and second dielectric layers are alternately stacked, and the refractive index of the first dielectric layers is different from that of the second dielectric layers.

Claims

1. A pixel structure, driven by a scan line and a data line arranged on a substrate, comprising:

a control unit arranged on the substrate, wherein the control unit is driven by the scan line and the data line;

an OEL unit arranged on the substrate, the OEL unit comprising a transparent electrode, a light-emitting layer and a metal electrode, wherein the transparent electrode is electrically connected with the control unit, and the light-emitting layer and the metal electrode are sequentially stacked on the transparent electrode; and

a semi-transparent reflector structure sandwiched between the substrate and the OEL unit, the semi-transparent reflector structure at least comprising a plurality of first and second dielectric layers, the first and second dielectric layers being alternately stacked, and the refractive index of the first dielectric layers being different from that of the second dielectric layers.

2. The pixel structure according to claim 1, wherein the optical thickness of each first and second dielectric layers is N times a quarter of a wavelength, wherein N is an integer.

3. The pixel structure according to claim 1, wherein a material of the first dielectric layers comprises silicon nitride and a material of the second dielectric layers comprises silicon dioxide.

4. The pixel structure according to claim 1, wherein the semi-transparent reflector structure further comprises a middle layer arranged in the middle of the first and second dielectric layers, and the refractive index of the middle layer is larger than that of the second dielectric layers.

5. The pixel structure according to claim 4, wherein a material of the middle layer comprises silicon nitride or titania.

6. The pixel structure according to claim 1, wherein the first dielectric layers and the second dielectric layers are sandwiched between the substrate and the OEL unit, and are extended to the top of the control unit.

7. The pixel structure according to claim 1, wherein the semi-transparent reflector structure further comprises a third dielectric layer, the third dielectric layer being extended from the bottom of the first and second dielectric layers to the control unit.

8. The pixel structure according to claim 7, wherein the third dielectric layer is a single layer or a multi-layer structure.

9. The pixel structure according to claim 7, wherein the semi-transparent reflector structure further comprises a fourth dielectric layer over the control unit, the fourth dielectric layer being extended between the bottom of the first and second dielectric layers and the third dielectric layer.

10. The pixel structure according to claim 9, wherein the fourth dielectric layer is a single layer or a multi-layer structure.

11. The pixel structure according to claim 9, wherein the total thickness of the first and second dielectric layers is larger than that of the third and fourth dielectric layers.

12. The pixel structure according to claim 1, wherein the control unit comprises a plurality of active devices, and the active devices are electrically connected to each other.

13. The pixel structure according to claim 11, wherein the active devices comprise amorphous silicon thin film transistors or low temperature poly-silicon thin film transistors.

14. The pixel structure according to claim 1, further comprising a pixel define layer arranged upon the control unit and a portion of the transparent electrode.