LIGHT-EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME

• US 20100117530A1
• Filed: 11/10/2008
• Published: 05/13/2010
• Est. Priority Date: 11/10/2008
• Status: Active Grant

• Current Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc), Visera Technologies Company Limited (Taiwan Semiconductor Manufacturing Company Limited)
• Original Assignee: Visera Technologies Company Limited (Taiwan Semiconductor Manufacturing Company Limited)
• Inventors: LIN, Tzy-Ying, WENG, Jui-Ping, Kang, Wei-Hung, LIN, Tzu-Han
• Granted Patent: US 7,928,655 B2
• Time in Patent Office: Days
• US Class Current: 313/512
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12036 PN diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting diode (LED) device is disclosed. The LED device includes a semiconductor substrate with a planar top surface, a light-emitting diode (LED) chip disposed over the top surface of the semiconductor substrate, at least two isolated outer wiring layers formed through the semiconductor substrate and electrically connected to the light-emitting diode chip, serving as input terminals, a transparent encapsulating layer with a substantially planar top surface formed over the semiconductor substrate, capping the LED chip and the at least two isolated outer wiring layers, and a lens module adhered to the substantially planar top surface of the transparent encapsulating layer to cap the light-emitting diode chip. In one embodiment, the lens module includes a fluorescent layer and a lens covering or covered by the fluorescent layer.

Claims

1. A light-emitting diode (LED) device, comprising:

a semiconductor substrate with a planar top surface;

a light-emitting diode (LED) chip disposed over the top surface of the semiconductor substrate;

at least two isolated outer wiring layers formed through the semiconductor substrate and electrically connected to the light-emitting diode chip, serving as input terminals;

a transparent encapsulating layer formed over the semiconductor substrate, capping the LED chip and the at least two isolated outer wiring layers, wherein the transparent encapsulating layer has a substantially planar top surface; and

a lens module adhered to the substantially planar top surface of the transparent encapsulating layer to cap the light-emitting diode chip, comprising;

a fluorescent layer; and

a lens covering or covered by the fluorescent layer.

2. The LED device of claim 1, wherein the fluorescent layer is a molded fluorescent layer, the lens is a molded lens, and the lens covers the fluorescent layer.

3. The LED device of claim 1, wherein the fluorescent layer is a molded fluorescent layer, the lens is a molded lens, and the lens is covered by the fluorescent layer.

4. The LED device of claim 1, wherein the fluorescent layer is formed by an electrophoresis, the lens is a molded lens, and the lens covers the fluorescent layer.

5. The LED device of claim 4, wherein the fluorescent layer is formed with a planar top surface.

6. The LED device of claim 1, further comprising at least two isolated inner wiring layers disposed over the planar top surface of the semiconductor substrate and, electrically connecting between the light-emitting diode chip and the isolated outer wiring layers.

7. The LED device of claim 6, wherein the semiconductor substrate comprises at least two through openings under the planar surface of the semiconductor substrate, such that the outer wiring layers are electrically connected to the inner wiring layers by the through openings, respectively.

8. The LED device of claim 6, wherein the LED chip electrically connects the at least two isolated inner wiring layers by wire bonds.

9. The LED device of claim 6, further comprising a conductive redistribution layer formed through the transparent encapsulating layer and over a portion thereof, the light-emitting diode chip and the isolated outer wiring layers.

10. The LED device of claim 1, wherein the transparent encapsulating layer comprises silicone gel.

15. The method of claim 10, wherein the fluorescent layer is a molded fluorescent layer, the lens is a molded lens, and the lens covers the fluorescent layer.

16. The method of claim 10, wherein the fluorescent layer is a molded fluorescent layer, the lens is a molded lens, and the lens is covered by the fluorescent layer.

17. The method of claim 10, wherein the fluorescent layer is formed by an electrophoresis, the lens is a molded lens, and the lens covers the fluorescent layer.

18. The method of claim 17, wherein the fluorescent layer is formed with a planar top surface.

11. A method for fabricating a light-emitting diode (LED) device, comprising:

providing a semiconductor substrate with a planar top surface;

forming a plurality of light-emitting diode chips over the top surface of the semiconductor substrate;

capping the LED chips with a transparent encapsulating layer, wherein the transparent encapsulating layer has a substantially planar top surface;

capping the light-emitting diode chips with a plurality of lens modules,

wherein each of the lens modules comprises;

a fluorescent layer formed over a portion of the substantially planar top surface of the transparent encapsulating layer, respectively facing one of the light-emitting diode chips; and

a lens covering or covered by the fluorescent layer;

and

etching a bottom surface of the semiconductor substrate between the adjacent LED chips to form individual LED devices.

12. The method of claim 11, further forming at least two isolated outer wiring layers through the semiconductor substrate and electrically connected to the corresponding light-emitting diode chip to serve as input terminals.

13. The method of claim 12, further forming at least two isolated inner wiring layers over the planar top surface of the semiconductor substrate to electrically connect between the corresponding light-emitting diode chip and the corresponding outer wiring layers.

14. The method of claim 13, wherein each semiconductor substrate further comprises at least two through openings formed through the semiconductor substrate, such that the corresponding outer wiring layers are electrically connected to the corresponding inner wiring layers by the through openings.

19. The method of claim 13, further comprises performing a wire bonding process to electrically connect the LED chip with the at least two isolated inner wiring layers.

20. The method of claim 13, further comprising a conductive redistribution layer through the transparent encapsulating layer and over a portion thereof to electrically connect the LED chip and the at least two isolated inner wiring layers.