PLASMA RESISTANT COATINGS FOR PLASMA CHAMBER COMPONENTS

• US 20100119843A1
• Filed: 11/10/2008
• Published: 05/13/2010
• Est. Priority Date: 11/10/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: SUN, JENNIFER Y., He, Xiao-Ming, Thach, Senh
• Granted Patent: US 8,206,829 B2
• Time in Patent Office: Days
• US Class Current: 428/426
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

Plasma resistant coating materials, plasma resistant coatings and methods of forming such coatings on hardware components. In one embodiment, hardware component is an electrostatic chuck (ESC) and the plasma resistant coating is formed on a surface of the ESC. The plasma resistant coatings are formed by methods other than thermal spraying to provide plasma resistant coatings having advantageous material properties.

Claims

1. A component of a plasma processing chamber, comprising:

a substrate; and

a plasma resistant coating disposed over at least a portion of the substrate, wherein the plasma resistant coating comprises a ceramic non-native to the substrate and having a porosity below 1%.

2. A plasma processing chamber component as in claim 1, wherein the plasma resistant coating porosity is 0% and wherein the plasma resistant coating is amorphous.

3. A plasma processing chamber component as in claim 1, wherein the plasma resistant coating surface has an arithmetic roughness average (R_a) of less than 1 μ

m.

4. A plasma processing chamber component as in claim 3, wherein the component is an electrostatic chuck component and wherein the plasma resistant coating has a breakdown voltage of at least 1000 V/mil.

5. A plasma processing chamber component as in claim 4, wherein the ceramic comprises at least one of:

an oxide, nitride, boride, carbide, or halide of an element selected from the group consisting of;

Y, Ir, Rh, and lanthanoids.

6. A plasma processing chamber component as in claim 5, further comprising an intermediate layer disposed between the substrate and the plasma resistant coating, wherein the intermediate layer comprises an oxide, nitride or carbide of an element other than that of the primary constituent in the plasma resistant coating.

7. A plasma processing chamber component as in claim 6, wherein the intermediate layer comprises SiO₂.

8. A plasma processing chamber component as in claim 1, wherein the plasma resistant coating has a crystalline texture with a preferred out-of-plane growth orientation.

9. A plasma processing chamber component as in claim 8, wherein the preferred out-of-plane growth orientation provides a plane of highest density on an outer surface of the plasma resistant coating.

10. A plasma processing chamber component as in claim 1, wherein the substrate is a ceramic or aluminum alloy and the plasma resistant coating is substantially free of aluminum or wherein the substrate is quartz and the plasma resistant coating is substantially free of silicon.

11. A method of forming a plasma resistant coating for a plasma chamber component, comprising:

providing a substrate; and

forming the plasma resistant coating over the substrate under conditions which expose the plasma resistant coating to energetic particles having a diameter less than approximately 1 μ

m as the coating is formed.

12. A method as in claim 11, wherein forming the plasma resistant coating further comprises depositing at least one of:

an oxide, nitride, boride, carbide, or fluoride of an element selected from the group consisting of;

Y, Ir, Rh, and lanthanoids.

13. A method as in claim 11, wherein the energetic particles are charged and the deposition method comprises at least one of a halogen or oxygen as a reactive gas species.

14. A method as in claim 11, wherein the plasma resistant coating is deposited by ion assisted deposition (IAD) or plasma reactive deposition (PRD).

15. A method as in claim 11, wherein the substrate is electrically biased while the plasma resistant coating is deposited over the component substrate.

16. A method as in claim 15, wherein the plasma resistant coating is deposited by plasma enhanced CVD, plasma enhanced evaporative or physical vapor deposition process, or plasma immersion ion process (PIIP).

17. A method as in claim 11, wherein the plasma resistant coating is formed with a porosity less than 1%.

18. A method as in claim 11, wherein the component is an electrostatic chuck and the method further comprises:

depositing an intermediate layer on the electrostatic chuck substrate prior to depositing the plasma resistant coating, wherein the intermediate layer comprises an oxide of an element absent in the plasma resistant coating.

19. A method as in claim 18, wherein the intermediate layer comprises SiO₂.

20. The method as in claim 11, wherein the plasma resistant coating is ion implanted subsequent to deposition of the plasma resistant coating.

21. A method of forming a plasma resistant coating on a plasma chamber component, comprising:

providing a component substrate; and

forming the plasma resistant coating over the component substrate with a nanoparticle mass flow deposition process.

22. A method as in claim 21, wherein the nanoparticle is a ceramic particle having a dimension less than 1 μ

m and comprising at least one of;

an oxide, nitride, boride, carbide, or halide of an element selected from the group consisting of;

Y, Ir, Rh, and lanthanoids.

23. A method as in claim 21, wherein the plasma resistant coating is formed with a porosity less than 1%.

24. A method as in claim 21, wherein the component is an electrostatic chuck and the method further comprises:

depositing an intermediate layer on the electrostatic chuck substrate prior to depositing the plasma resistant coating, wherein the intermediate layer comprises an oxide of an element absent in the plasma resistant coating.

25. A method as in claim 24, wherein the intermediate layer comprises SiO₂.