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OPTOELECTRONIC DEVICE STRUCTURE

  • US 20100120184A1
  • Filed: 11/12/2009
  • Published: 05/13/2010
  • Est. Priority Date: 11/13/2008
  • Status: Abandoned Application
First Claim
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1. A method for forming an optoelectronic device comprising the steps of:

  • providing a growth substrate having a first surface and a second surface;

    forming an epitaxial structure on the first surface of the growth substrate wherein the epitaxial structure comprising an n-type semiconductor layer, an active layer, and a p-type semiconductor layer;

    forming a reflective layer on the epitaxial structure;

    forming a stress-balancing layer by an electro chemical deposition process or an electroless chemical deposition process on a side of the reflective layer opposite to the epitaxial structure;

    forming a high thermal conductive substrate by an electro chemical deposition process or an electroless chemical deposition process on a side of the stress-balancing layer opposite to the epitaxial structure wherein the stress-balancing layer can reduce the internal stress between the high thermal conductive substrate and the epitaxial structure, and the difference of the thermal expansion coefficients between the high thermal conductive substrate and the epitaxial structure is not smaller than 5 ppm/°

    C.;

    removing the growth substrate to expose a surface of the epitaxial structure;

    forming an electrode on the exposed surface of the epitaxial structure wherein the electrode electrically connected to the epitaxial structure;

    forming a plurality of channels by etching from the epitaxial structure to the high thermal conductive substrate; and

    dicing along the plurality of channels.

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