SEMICONDUCTOR DIE SINGULATION METHOD

• US 20100120227A1
• Filed: 01/18/2010
• Published: 05/13/2010
• Est. Priority Date: 08/07/2007
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Grivna, Gordon M., Seddon, Michael J.
• Granted Patent: US 8,012,857 B2
• Time in Patent Office: Days
• US Class Current: 438/462
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304

Abstract

In one embodiment, semiconductor die are singulated from a semiconductor wafer by etching openings completely through the semiconductor wafer.

Claims

1. A method of forming a semiconductor die comprising:

providing a semiconductor wafer having a semiconductor substrate, the semiconductor substrate having a first thickness, a top surface, a bottom surface, and a plurality of semiconductor die formed on the top surface of the semiconductor substrate and separated from each other by portions of the semiconductor wafer where singulation lines are to be formed;

inverting the semiconductor wafer;

reducing a thickness of an interior portion of the bottom surface of the semiconductor wafer to a second thickness that is less than the first thickness and leaving an outer rim of the semiconductor wafer with the first thickness wherein the outer rim is juxtaposed to a periphery of the semiconductor wafer, and wherein the interior portion is underlying the plurality of semiconductor die;

forming a protective layer on the interior portion of the bottom surface of the semiconductor wafer wherein the protection layer is one of a metal or a metal compound or a metal-silicon compound; and

using a dry etch to reduce the first thickness of the outer rim to a third thickness that is less than the first thickness wherein the protective layer protects the interior portion from the dry etch so that the second thickness remains substantially constant.

2. The method of claim 1 wherein using the dry etch to reduce the first thickness includes using a dry etch that etches silicon faster than metals.

3. The method of claim 1 wherein inverting the semiconductor wafer includes attaching a support device to the top surface of the semiconductor wafer prior to inverting the semiconductor.

4. The method of claim 3 further including removing the support device prior to forming the protective layer.

5. The method of claim 3 further including attaching a carrier tape to the bottom surface of the semiconductor wafer subsequent to the step of using the dry etch to reduce the first thickness, and using a dry etch to form singulation lines from the top surface of the semiconductor wafer into the semiconductor substrate.

6. The method of claim 4 wherein using the dry etch to form singulation lines includes forming the singulation lines through the semiconductor wafer to stop on the protective layer.

7. The method of claim 1 wherein forming the protective layer includes patterning the protective layer to expose portions of the semiconductor substrate where the singulation lines are to be formed;

and

wherein using the dry etch to reduce the first thickness includes using the dry etch to etch the singulation lines from the bottom surface of the semiconductor substrate through the semiconductor substrate to the top surface of the semiconductor substrate.

8. The method of claim 1 further including removing any protective layer from the bottom surface of the outer rim prior to the step of using the dry etch to reduce the first thickness.

9. A method of forming a semiconductor die comprising:

providing a semiconductor wafer having a semiconductor substrate, the semiconductor substrate having a first thickness, a top surface, a bottom surface, and a plurality of semiconductor die formed on the top surface of the semiconductor substrate and separated from each other by portions of the semiconductor wafer where singulation lines are to be formed;

reducing a thickness of an interior portion of the bottom surface of the semiconductor wafer to a second thickness that is less than the first thickness and leaving an outer rim of the semiconductor wafer with the first thickness wherein the outer rim is juxtaposed to a periphery of the semiconductor wafer, and wherein the interior portion is underlying the plurality of semiconductor die;

forming a protective layer on the interior portion of the bottom surface of the wafer wherein the protection layer is one of a metal or a metal compound or a metal-silicon compound; and

using a dry etch to form singulation openings where the singulation lines are to be formed including forming the singulation openings through the semiconductor substrate wherein at least one singulation opening is formed between the outer rim and any semiconductor die adjacent to the outer rim.

10. The method of claim 9 wherein using the dry etch includes using the dry etch to form the singulation openings from the top surface of the semiconductor wafer through the semiconductor substrate and exposing a portion of the protective layer wherein the protective layer is an etch stop for the dry etch.

11. The method of claim 10 further including using another dry etch subsequently to the step of forming the protective layer including using the another dry etch to reduce the first thickness of the outer rim to a third thickness;

and wherein the step of using the dry etch to form the singulation openings includes using the dry etch to form the singulation opening from the top surface of the semiconductor wafer through the semiconductor substrate.

12. The method of claim 9 wherein forming the protective layer includes patterning the protective layer to expose portions of the bottom surface of the semiconductor wafer where the singulation lines are to be formed;

and

wherein the step of using the dry etch to form the singulation openings includes using the protective layer as a mask while using the dry etch to etch the singulation openings from the bottom surface of the semiconductor wafer through the semiconductor substrate to the top surface of the semiconductor substrate, and using the dry etch to etch the outer rim and reduce the first thickness of the outer rim to a third thickness that is less than the first thickness.

13. The method of claim 12 further including removing any portions of the protective layer on the bottom surface of the outer rim prior to the step of using the dry etch to form the singulation openings.

14. The method of claim 12 further including masking the bottom surface of the outer rim to prevent forming any of the protective layer on the bottom surface of the outer rim.

15. The method of claim 9 wherein reducing the thickness of the interior portion of the bottom surface of the semiconductor wafer includes grinding the interior portion.