Electrode, Chemical Vapor Deposition Apparatus Including the Electrode and Method of Making

• US 20100122657A1
• Filed: 11/14/2008
• Published: 05/20/2010
• Est. Priority Date: 11/14/2008
• Status: Abandoned Application

• Current Assignee: GTSP Global, Co.
• Original Assignee: GTSP Global, Co.
• Inventors: Hsieh, Jui Hai, DeLong, Dave
• Application Number:
  US12/270,981
• Publication Number:
  US 20100122657A1
• Time in Patent Office: Days
• US Class Current: 118/723.E
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: Y10T 29/49194 Assembling elongated conductors, e.g., splicing, etc.

Abstract

The present disclosure is directed to a chemical vapor deposition apparatus. The apparatus comprises a chamber having a gas inlet and a gas outlet. A first electrode is at least partially positioned in the chamber. The first electrode comprises an electrically conductive first portion and an electrically conductive second portion, the first portion being attached to the second portion by a first TIG weld bead. A second electrode is at least partially positioned in the chamber. The second electrode comprises an electrically conductive third portion and an electrically conductive fourth portion, the third portion being attached to the fourth portion by a second TIG weld bead. An electrode and a method of making the electrode are also disclosed.

Claims

1. A chemical vapor deposition apparatus, comprising:

a chamber having a gas inlet and a gas outlet;

a first electrode at least partially positioned in the chamber, the first electrode comprising an electrically conductive first portion and an electrically conductive second portion, the first portion being attached to the second portion by a first TIG weld bead; and

a second electrode at least partially positioned in the chamber, the second electrode comprising an electrically conductive third portion and an electrically conductive fourth portion, the third portion being attached to the fourth portion by a second TIG weld bead.

2. The chemical vapor deposition apparatus of claim 1, wherein the first TIG weld bead and the second TIG weld bead have a conductivity of about 80% IACS or greater.

3. The chemical vapor deposition apparatus of claim 1, wherein the first TIG weld bead and the second TIG weld bead comprise a metal chosen from OFC, OFC alloy, ETP Cu, ETP Cu alloy, silver and silver alloy.

4. The chemical vapor deposition apparatus of claim 3, wherein the first TIG weld bead and the second TIG weld bead are at least 95% oxygen free copper.

5. The chemical vapor deposition apparatus of claim 4, wherein the electrically conductive first portion and the electrically conductive second portion both comprise substantially oxygen free copper.

6. The chemical vapor deposition apparatus of claim 1, further comprising a silicon rod positioned in the chamber, a first end of the silicon rod being coupled to the first electrode and a second end of the silicon rod being coupled to the second electrode.

7. The chemical vapor deposition apparatus of claim 1, further comprising

a third electrode at least partially positioned in the chamber, the third electrode comprising an electrically conductive fifth portion and an electrically conductive sixth portion, the fifth portion being attached to the sixth portion by a third TIG weld bead;

and

a fourth electrode at least partially positioned in the chamber, the fourth electrode comprising an electrically conductive seventh portion and an electrically conductive eighth portion, the seventh portion being attached to the eighth portion by a fourth TIG weld bead.

8. An electrode comprising an electrically conductive first portion and an electrically conductive second portion, the first portion being attached to the second portion by a TIG weld bead.

9. The electrode of claim 8, wherein the conductive first portion comprises a first end and a second end, a cavity extending longitudinally through the conductive portion from the first end partially through the electrode, an inlet and an outlet;

and wherein the conductive second portion comprises a conductive end portion attached to the first end of the conductive first portion by the weld bead; and

further comprising a conduit positioned in the cavity, the conductive first portion and the conduit configured so that a coolant can flow into the electrode through the inlet and out of the electrode through the outlet.

10. The electrode of claim 8, wherein the weld bead has a conductivity of about 80% IACS or greater.

11. The electrode of claim 8, wherein the weld bead comprises a metal chosen from OFC, OFC alloy, ETP Cu, ETP Cu alloy, silver and silver alloy.

12. The electrode of claim 11, wherein the weld bead is at least 95% oxygen free copper.

13. The electrode of claim 12, wherein the electrically conductive first portion and the electrically conductive second portion both comprise substantially oxygen free copper.

14. The electrode of claim 8, wherein the electrically conductive first portion and the electrically conductive second portion both comprise at least 99% pure copper by weight.

15. A method of forming a first electrode comprising welding an electrically conductive first portion to an electrically conductive second portion, the welding of the first portion and the second portion being accomplished by a first welding process.

16. The method of claim 15, wherein the TIG welding process is carried out using a filler material chosen from substantially oxygen free copper and alloys thereof.

17. The method of claim 15, wherein the TIG welding process is carried out using a filler material chosen from OFC, OFC alloy, ETP Cu, ETP Cu alloy, silver and silver alloy

18. The method of claim 15, wherein the electrically conductive first portion and the electrically conductive second portion comprise 99% pure copper by weight.

19. The method of claim 15, wherein the TIG welding process is automated, the method further comprising detecting one or more defects in a weld bead formed by the TIG welding process, and reworking the weld bead to correct the defects.