ZINC OXIDE BASED SPUTTERING TARGET, METHOD FOR MANUFACTURING ZINC OXIDE BASED SPUTTERING TARGET, ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, METHOD FOR MANUFACTURING ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, AND ELECTRONIC APPARATUS

• US 20100123103A1
• Filed: 11/18/2009
• Published: 05/20/2010
• Est. Priority Date: 11/20/2008
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Nagata, Takahiro, Kawashima, Toshitaka, Kamori, Yuichi, Kirita, Shina
• Granted Patent: US 8,182,722 B2
• Time in Patent Office: Days
• US Class Current: 252/519.510
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01B 1/08 oxides

Abstract

A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using γ-Al₂O₃ as a dopant material.

Claims

1. A method for manufacturing a zinc oxide based sputtering target comprising the step of:

producing a zinc oxide based sputtering target by using γ

-Al₂O₃ as a dopant material.

2. The method for manufacturing a zinc oxide based sputtering target according to claim 1,

wherein 1 percent by weight or more, and 3 percent by weight or less of γ

-Al₂O₃ is contained.

3. The method for manufacturing a zinc oxide based sputtering target according to claim 2,

wherein a zinc oxide powder and a γ

-Al₂O₃ powder are mixed and sintered.

4. The method for manufacturing a zinc oxide based sputtering target according to claim 3,

wherein the zinc oxide powder and the γ

-Al₂O₃ powder are mixed and sintered at a temperature of 1,150°

C. or higher, and 1,300°

C. or lower.

5. The method for manufacturing a zinc oxide based sputtering target according to claim 4,

wherein the particle size of γ

-Al₂O₃ is specified to be 0.3 μ

m or more, and 0.5 μ

m or less.

6. A zinc oxide based sputtering target,

wherein γ

-Al₂O₃ is used as a dopant material.

7. The zinc oxide based sputtering target according to claim 6, comprising 1 percent by weight or more, and 3 percent by weight or less of γ

-Al₂O₃.

8. The zinc oxide based sputtering target according to claim 7, wherein the particle size of γ

-Al₂O₃ is specified to be 0.3 μ

m or more, and 0.5 μ

m or less.

9. A method for manufacturing a zinc oxide based transparent electrically conductive film comprising the step of:

forming a zinc oxide based transparent electrically conductive film by a sputtering method through the use of a zinc oxide based sputtering target in which γ

-Al₂O₃ is used as a dopant material.

10. The method for manufacturing a zinc oxide based transparent electrically conductive film according to claim 9,

wherein the zinc oxide based transparent electrically conductive film is formed by using a direct current sputtering apparatus.

11. The method for manufacturing a zinc oxide based transparent electrically conductive film according to claim 10,

wherein the zinc oxide based transparent electrically conductive film is formed by the sputtering method and, thereafter, a heat treatment is conducted at a temperature of 120°

C. or higher.

12. A zinc oxide based transparent electrically conductive film formed by a sputtering method through the use of a zinc oxide based sputtering target in which γ

-Al₂O₃ is used as a dopant material.

13. An electronic apparatus comprising a zinc oxide based transparent electrically conductive film formed by a sputtering method through the use of a zinc oxide based sputtering target in which γ

-Al₂O₃ is used as a dopant material.