METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND SOQ (SILICON ON QUARTZ) SUBSTRATE USED IN THE METHOD
First Claim
1. A method of producing a semiconductor device, comprising the steps of:
- preparing an SOQ (Silicon On Quartz) substrate in which a semiconductor layer is formed on a quartz substrate;
forming a plurality of semiconductor device forming regions in the SOQ substrate;
forming a crack inspection pattern in the SOQ substrate;
inspecting the crack inspection pattern to detect a crack in the crack inspection pattern in a first inspection step; and
inspecting the semiconductor device forming regions to detect a crack in the semiconductor device forming regions in a second inspection step when the crack is detected in the crack inspection pattern in the first inspection step.
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Accused Products
Abstract
A method of producing a semiconductor device includes the steps of preparing an SOQ (Silicon On Quartz) substrate in which a semiconductor layer is formed on a quartz substrate; forming a plurality of semiconductor device forming regions in the SOQ substrate; forming a crack inspection pattern in the SOQ substrate; inspecting the crack inspection pattern to detect a crack in the crack inspection pattern in a first inspection step; and inspecting the semiconductor device forming regions to detect a crack in the semiconductor device forming regions in a second inspection step when the crack is detected in the crack inspection pattern in the first inspection step.
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Citations
14 Claims
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1. A method of producing a semiconductor device, comprising the steps of:
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preparing an SOQ (Silicon On Quartz) substrate in which a semiconductor layer is formed on a quartz substrate; forming a plurality of semiconductor device forming regions in the SOQ substrate; forming a crack inspection pattern in the SOQ substrate; inspecting the crack inspection pattern to detect a crack in the crack inspection pattern in a first inspection step; and inspecting the semiconductor device forming regions to detect a crack in the semiconductor device forming regions in a second inspection step when the crack is detected in the crack inspection pattern in the first inspection step. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An SOQ (Silicon On Quartz) substrate comprising:
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a quartz substrate; a semiconductor layer formed on the quartz substrate; a plurality of semiconductor device forming regions; and a crack inspection pattern. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification