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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100123136A1
  • Filed: 12/12/2008
  • Published: 05/20/2010
  • Est. Priority Date: 05/13/2008
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising;

  • forming an oxide semiconductor layer;

    forming a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising a first element and a second element, the first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;

    forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and

    oxidizing the first element near an interface region between the first conductive layer and the oxide semiconductor layer.

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