SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20100123136A1
• Filed: 12/12/2008
• Published: 05/20/2010
• Est. Priority Date: 05/13/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: LEE, Je-Hun, Kim, Do-Hyun, Ihn, Tae-Hyung
• Granted Patent: US 8,067,276 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

Claims

1. A method of manufacturing a semiconductor device, the method comprising;

forming an oxide semiconductor layer;

forming a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising a first element and a second element, the first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;

forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and

oxidizing the first element near an interface region between the first conductive layer and the oxide semiconductor layer.

2. The method of claim 1, wherein oxidizing the first element comprises heat treating the first element.

3. The method of claim 1, oxidizing the first element comprises irradiating the first element with a laser.

4. The method of claim 1, wherein the second conductive layer has higher crystallinity than the first conductive layer.

5. The method of claim 1, wherein the first element comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, and W.

6. The method of claim 1, wherein the oxide semiconductor layer comprises at least one of zinc oxide, cadmium oxide, indium oxide, tin oxide, and hafnium oxide.

7. The method of claim 1, wherein the oxide semiconductor layer comprises at least one of Li, Na, K, Rb, Cs, Be, Mg, Ca, B, Ga, In, Ti, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, Cl, Br, and I.

8. A method of manufacturing a semiconductor device, the method comprising;

forming a nitride semiconductor layer;

forming a first conductive layer on the nitride semiconductor layer, the first conductive layer comprising a first element and a second element, the first element having a Gibbs free energy of nitride formation lower than those of the second element or any element in the nitride semiconductor layer;

forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and

nitrogenizing the first element near an interface region between the first conductive layer and the nitride semiconductor layer.

9. The method of claim 8, wherein nitrogenizing the first element comprises heat treating the first element.

10. The method of claim 8, wherein nitrogenizing the first element comprises irradiating the first element with a laser.

11. The method of claim 8, wherein the second conductive layer has higher crystallinity than the first conductive layer.

12. The method of claim 8, wherein the first element comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, and W.

13. The method of claim 8, wherein the nitride semiconductor layer comprises at least one of zinc nitride, indium nitride, gallium nitride, and yttrium nitride.

14. The method of claim 8, wherein the nitride semiconductor layer comprises at least one of Li, Na, K, Rb, Cs, Be, Mg, Ca, B, Ga, In, Ti, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, Cl, Br, and I.

15. A method of manufacturing a semiconductor device, the method comprising;

forming an oxide semiconductor layer over a substrate;

forming a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising a first element and a second element, the first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;

forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and

oxidizing the first element near a region of interface between the first conductive layer and the oxide semiconductor layer;

forming an insulating layer on the second conductive layer; and

forming a gate electrode on the insulating layer,

wherein the gate electrode comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, Nb, and W.

16. A method of manufacturing a semiconductor device, the method comprising;

forming a gate electrode over a substrate;

forming an insulating layer covering the gate electrode;

forming an oxide semiconductor layer over the insulating layer;

forming a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising a first element and a second element, the first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;

forming a second conductive layer on the first conductive layer, the second conductive layer comprising the second element; and

oxidizing the first element near an interface region between the first conductive layer and the oxide semiconductor layer.

17. A semiconductor device, comprising

an oxide semiconductor layer;

a first conductive layer on the oxide semiconductor layer, the first conductive layer comprising a second element and an oxidized first element near an interface region between the first conductive layer and the oxide semiconductor layer, the oxidized first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer; and

a second conductive layer on the first conductive layer, the second conductive layer comprising the second element and not comprising the first element.

18. The semiconductor device of claim 17, wherein the second conductive layer has higher crystallinity than the first conductive layer.

19. The semiconductor device of claim 17, wherein the first element comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, and W.

20. The semiconductor device of claim 17, wherein the oxide semiconductor layer comprises at least one of zinc oxide, cadmium oxide, indium oxide, tin oxide, and hafnium oxide.

21. The semiconductor device according to claim 17, wherein the oxide semiconductor layer comprises at least one of Li, Na, K, Rb, Cs, Be, Mg, Ca, B, Ga, In, Ti, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, F, Cl, Br, and I.

24. A display panel including the semiconductor device of claim 17.

22. A semiconductor device, comprising;

a substrate;

an oxide semiconductor layer on the substrate;

a first conductive layer on the oxide semiconductor layer, the oxide semiconductor layer comprising a second element and an oxidized first element near an interface region between the first conductive layer and the oxide semiconductor layer, the oxidized first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer;

a second conductive layer on the first conductive layer, the second conductive layer comprising the second element;

an insulating layer on the second conductive layer; and

a gate electrode on the insulating layer,

wherein the gate electrode comprises at least one of Al, Ti, Cu, Au, Ag, Mo, Ni, Ta, Zr, Cr, Co, Nb, and W.

23. A semiconductor device, comprising;

a substrate;

a gate electrode on the substrate;

an insulating layer covering the gate electrode;

an oxide semiconductor layer on the insulating layer;

a first conductive layer on the insulating later, the first conductive layer comprising a second element and an oxidized first element near an interface region between the first conductive layer and the oxide semiconductor layer, the oxidized first element having a Gibbs free energy of oxide formation lower than those of the second element or any element in the oxide semiconductor layer; and

a second conductive layer on the first conductive layer, the second conductive layer comprising the second element.